This study proposes a heterogeneous integration of precise and approximate storage in data center storage. The storage control engine allocates precise and error-tolerant applications to precise and approximate storage, respectively. The appropriate use of both precise and approximate storage is examined by applying a non-volatile memory capacity algorithm. To respond to the changes in application over time, the non-volatile memory capacity algorithm changes capacity of storage class memories (SCMs), namely the memory-type SCM (M-SCM) and storage-type SCM (S-SCM), in non-volatile memory resource. A three-dimensional triple-level cell (TLC) NAND flash is used as a large capacity memory. The results indicate that precise storage exhibits a high performance when the maximum storage cost is high. By contrast, with a low maximum storage cost, approximate storage exhibits high performance using a low bit cost approximate multiple-level cell (MLC) S-SCM.
Chihiro MATSUI
The University of Tokyo
Ken TAKEUCHI
The University of Tokyo
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Chihiro MATSUI, Ken TAKEUCHI, "Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads" in IEICE TRANSACTIONS on Fundamentals,
vol. E106-A, no. 3, pp. 491-503, March 2023, doi: 10.1587/transfun.2022VLP0001.
Abstract: This study proposes a heterogeneous integration of precise and approximate storage in data center storage. The storage control engine allocates precise and error-tolerant applications to precise and approximate storage, respectively. The appropriate use of both precise and approximate storage is examined by applying a non-volatile memory capacity algorithm. To respond to the changes in application over time, the non-volatile memory capacity algorithm changes capacity of storage class memories (SCMs), namely the memory-type SCM (M-SCM) and storage-type SCM (S-SCM), in non-volatile memory resource. A three-dimensional triple-level cell (TLC) NAND flash is used as a large capacity memory. The results indicate that precise storage exhibits a high performance when the maximum storage cost is high. By contrast, with a low maximum storage cost, approximate storage exhibits high performance using a low bit cost approximate multiple-level cell (MLC) S-SCM.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.2022VLP0001/_p
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@ARTICLE{e106-a_3_491,
author={Chihiro MATSUI, Ken TAKEUCHI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads},
year={2023},
volume={E106-A},
number={3},
pages={491-503},
abstract={This study proposes a heterogeneous integration of precise and approximate storage in data center storage. The storage control engine allocates precise and error-tolerant applications to precise and approximate storage, respectively. The appropriate use of both precise and approximate storage is examined by applying a non-volatile memory capacity algorithm. To respond to the changes in application over time, the non-volatile memory capacity algorithm changes capacity of storage class memories (SCMs), namely the memory-type SCM (M-SCM) and storage-type SCM (S-SCM), in non-volatile memory resource. A three-dimensional triple-level cell (TLC) NAND flash is used as a large capacity memory. The results indicate that precise storage exhibits a high performance when the maximum storage cost is high. By contrast, with a low maximum storage cost, approximate storage exhibits high performance using a low bit cost approximate multiple-level cell (MLC) S-SCM.},
keywords={},
doi={10.1587/transfun.2022VLP0001},
ISSN={1745-1337},
month={March},}
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TY - JOUR
TI - Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 491
EP - 503
AU - Chihiro MATSUI
AU - Ken TAKEUCHI
PY - 2023
DO - 10.1587/transfun.2022VLP0001
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E106-A
IS - 3
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - March 2023
AB - This study proposes a heterogeneous integration of precise and approximate storage in data center storage. The storage control engine allocates precise and error-tolerant applications to precise and approximate storage, respectively. The appropriate use of both precise and approximate storage is examined by applying a non-volatile memory capacity algorithm. To respond to the changes in application over time, the non-volatile memory capacity algorithm changes capacity of storage class memories (SCMs), namely the memory-type SCM (M-SCM) and storage-type SCM (S-SCM), in non-volatile memory resource. A three-dimensional triple-level cell (TLC) NAND flash is used as a large capacity memory. The results indicate that precise storage exhibits a high performance when the maximum storage cost is high. By contrast, with a low maximum storage cost, approximate storage exhibits high performance using a low bit cost approximate multiple-level cell (MLC) S-SCM.
ER -