Reliability Life Tests on an Encapsulated Millimeter-Wave DDR IMPATT Diode

Masamichi OHMORI; Masayuki INO; Masatomo FUJIMOTO; Hiroyuki NAGAO; Nobuhiko FUJINE; Kenji SEKIDO

Reliability Life Tests on an Encapsulated Millimeter-Wave DDR IMPATT Diode

Masamichi OHMORI, Masayuki INO, Masatomo FUJIMOTO, Hiroyuki NAGAO, Nobuhiko FUJINE, Kenji SEKIDO

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The operating life for a newly developed millimeter-wave silicon DDR IMPATT diode, which is hermetically sealed in a mechanically rugged miniature ceramic package with a diamond heat sink, is evaluated by accelerated life tests consisting of high-temperature storage and high-temperature DC operation. A mean time to failure (MTTF) value of approximately 2.610⁵ h (3800 FIT) is predicted at a junction temperature of 235, where the diode is capable of delivering an output power of 100 to 150 mW at 80 CHz band. The predominant failure mode is a junction short caused by gold diffusion into the silicon layer. An rf operating life test is also conducted. There has been no failure for 12,000 h.

Publication: IEICE TRANSACTIONS on transactions Vol.E63-E No.6 pp.409-413

Publication Date: 1980/06/25

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Type of Manuscript: PAPER

Category: Electron Devices

Authors

Masamichi OHMORI
Masayuki INO
Masatomo FUJIMOTO
Hiroyuki NAGAO
Nobuhiko FUJINE
Kenji SEKIDO

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Masamichi OHMORI, Masayuki INO, Masatomo FUJIMOTO, Hiroyuki NAGAO, Nobuhiko FUJINE, Kenji SEKIDO, "Reliability Life Tests on an Encapsulated Millimeter-Wave DDR IMPATT Diode" in IEICE TRANSACTIONS on transactions, vol. E63-E, no. 6, pp. 409-413, June 1980, doi: .
Abstract: The operating life for a newly developed millimeter-wave silicon DDR IMPATT diode, which is hermetically sealed in a mechanically rugged miniature ceramic package with a diamond heat sink, is evaluated by accelerated life tests consisting of high-temperature storage and high-temperature DC operation. A mean time to failure (MTTF) value of approximately 2.610⁵ h (3800 FIT) is predicted at a junction temperature of 235, where the diode is capable of delivering an output power of 100 to 150 mW at 80 CHz band. The predominant failure mode is a junction short caused by gold diffusion into the silicon layer. An rf operating life test is also conducted. There has been no failure for 12,000 h.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e63-e_6_409/_p

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@ARTICLE{e63-e_6_409,
author={Masamichi OHMORI, Masayuki INO, Masatomo FUJIMOTO, Hiroyuki NAGAO, Nobuhiko FUJINE, Kenji SEKIDO, },
journal={IEICE TRANSACTIONS on transactions},
title={Reliability Life Tests on an Encapsulated Millimeter-Wave DDR IMPATT Diode},
year={1980},
volume={E63-E},
number={6},
pages={409-413},
abstract={The operating life for a newly developed millimeter-wave silicon DDR IMPATT diode, which is hermetically sealed in a mechanically rugged miniature ceramic package with a diamond heat sink, is evaluated by accelerated life tests consisting of high-temperature storage and high-temperature DC operation. A mean time to failure (MTTF) value of approximately 2.610⁵ h (3800 FIT) is predicted at a junction temperature of 235, where the diode is capable of delivering an output power of 100 to 150 mW at 80 CHz band. The predominant failure mode is a junction short caused by gold diffusion into the silicon layer. An rf operating life test is also conducted. There has been no failure for 12,000 h.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - Reliability Life Tests on an Encapsulated Millimeter-Wave DDR IMPATT Diode
T2 - IEICE TRANSACTIONS on transactions
SP - 409
EP - 413
AU - Masamichi OHMORI
AU - Masayuki INO
AU - Masatomo FUJIMOTO
AU - Hiroyuki NAGAO
AU - Nobuhiko FUJINE
AU - Kenji SEKIDO
PY - 1980
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E63-E
IS - 6
JA - IEICE TRANSACTIONS on transactions
Y1 - June 1980
AB - The operating life for a newly developed millimeter-wave silicon DDR IMPATT diode, which is hermetically sealed in a mechanically rugged miniature ceramic package with a diamond heat sink, is evaluated by accelerated life tests consisting of high-temperature storage and high-temperature DC operation. A mean time to failure (MTTF) value of approximately 2.610⁵ h (3800 FIT) is predicted at a junction temperature of 235, where the diode is capable of delivering an output power of 100 to 150 mW at 80 CHz band. The predominant failure mode is a junction short caused by gold diffusion into the silicon layer. An rf operating life test is also conducted. There has been no failure for 12,000 h.
ER -