Theoretical Considerations on a Contactless Measuring Method of Electric Conductivity of Semiconductor Circular Wafer

Ichiro MURAKAMI; Miki GOTO

Theoretical Considerations on a Contactless Measuring Method of Electric Conductivity of Semiconductor Circular Wafer

Ichiro MURAKAMI, Miki GOTO

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Authors derived an electromagnetic theory of the contactless measuring method of electric conductivity of nonmagnetic semiconductor circular wafer referring to the arrangement shown in Fig. 1, and have got the result for d'd:
(16)
where V is electromotive force induced along measuring coil due to the eddy current in the wafer induced by exciting coil, for the lower frequency range:
f50 MHz, λ6 m, for R 1 m (1')
where R is a symbolic representation of scale of arbitrary element used in this arrangement, and under the condition that the thickness t of the wafer is much smaller than the depth of penetration δ of the semiconductor. We discussed practical measurement of V, especially separation of V and V₀ which is electromotive force induced by direct field from exciting coil to measuring coil, using the phase difference between V and V₀. We use SI unit system and time factor e^jwt in this paper.

Publication: IEICE TRANSACTIONS on transactions Vol.E65-E No.8 pp.492-496

Publication Date: 1982/08/25

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Type of Manuscript: PAPER

Category: Semiconductors

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Ichiro MURAKAMI
Miki GOTO

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Ichiro MURAKAMI, Miki GOTO, "Theoretical Considerations on a Contactless Measuring Method of Electric Conductivity of Semiconductor Circular Wafer" in IEICE TRANSACTIONS on transactions, vol. E65-E, no. 8, pp. 492-496, August 1982, doi: .
Abstract: Authors derived an electromagnetic theory of the contactless measuring method of electric conductivity of nonmagnetic semiconductor circular wafer referring to the arrangement shown in Fig. 1, and have got the result for d'd:
(16)
where V is electromotive force induced along measuring coil due to the eddy current in the wafer induced by exciting coil, for the lower frequency range:
f50 MHz, λ6 m, for R 1 m (1')
where R is a symbolic representation of scale of arbitrary element used in this arrangement, and under the condition that the thickness t of the wafer is much smaller than the depth of penetration δ of the semiconductor. We discussed practical measurement of V, especially separation of V and V₀ which is electromotive force induced by direct field from exciting coil to measuring coil, using the phase difference between V and V₀. We use SI unit system and time factor e^jwt in this paper.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e65-e_8_492/_p

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@ARTICLE{e65-e_8_492,
author={Ichiro MURAKAMI, Miki GOTO, },
journal={IEICE TRANSACTIONS on transactions},
title={Theoretical Considerations on a Contactless Measuring Method of Electric Conductivity of Semiconductor Circular Wafer},
year={1982},
volume={E65-E},
number={8},
pages={492-496},
abstract={Authors derived an electromagnetic theory of the contactless measuring method of electric conductivity of nonmagnetic semiconductor circular wafer referring to the arrangement shown in Fig. 1, and have got the result for d'd:
(16)
where V is electromotive force induced along measuring coil due to the eddy current in the wafer induced by exciting coil, for the lower frequency range:
f50 MHz, λ6 m, for R 1 m (1')
where R is a symbolic representation of scale of arbitrary element used in this arrangement, and under the condition that the thickness t of the wafer is much smaller than the depth of penetration δ of the semiconductor. We discussed practical measurement of V, especially separation of V and V₀ which is electromotive force induced by direct field from exciting coil to measuring coil, using the phase difference between V and V₀. We use SI unit system and time factor e^jwt in this paper.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - Theoretical Considerations on a Contactless Measuring Method of Electric Conductivity of Semiconductor Circular Wafer
T2 - IEICE TRANSACTIONS on transactions
SP - 492
EP - 496
AU - Ichiro MURAKAMI
AU - Miki GOTO
PY - 1982
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E65-E
IS - 8
JA - IEICE TRANSACTIONS on transactions
Y1 - August 1982
AB - Authors derived an electromagnetic theory of the contactless measuring method of electric conductivity of nonmagnetic semiconductor circular wafer referring to the arrangement shown in Fig. 1, and have got the result for d'd:
(16)
where V is electromotive force induced along measuring coil due to the eddy current in the wafer induced by exciting coil, for the lower frequency range:
f50 MHz, λ6 m, for R 1 m (1')
where R is a symbolic representation of scale of arbitrary element used in this arrangement, and under the condition that the thickness t of the wafer is much smaller than the depth of penetration δ of the semiconductor. We discussed practical measurement of V, especially separation of V and V₀ which is electromotive force induced by direct field from exciting coil to measuring coil, using the phase difference between V and V₀. We use SI unit system and time factor e^jwt in this paper.
ER -