Modeling a U-Shaped Gate MOSFET -A Model for Threshold Voltage-

Ryo DANG; Toshiaki KOJIMA; Yutaka AKIYAMA; Mitsutoshi NAKAMURA

Modeling a U-Shaped Gate MOSFET -A Model for Threshold Voltage-

Ryo DANG, Toshiaki KOJIMA, Yutaka AKIYAMA, Mitsutoshi NAKAMURA

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A new threshold voltage formula is derived for a U-shaped gate MOSFET where the gate oxide becomes thicker at both channel ends. It is found that when charge-sharing effect due to source/drain-junctions is not accounted for, threshold voltage increases with decreasing channel length, exhibiting an inverse short-channel effect (ISCE). When charge-sharing effect is taken into account, the ISCE reduces remarkably, resulting in a flat threshold voltage characteristic over a wide range of channel lengths. Computer simulations using a two-dimensional device simulator show a good agreement with these analytical findings.

Publication: IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.243-245

Publication Date: 1986/04/25

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Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)

Category: Silicon Devices and Integrated Circuits

Authors

Ryo DANG
Toshiaki KOJIMA
Yutaka AKIYAMA
Mitsutoshi NAKAMURA

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Ryo DANG, Toshiaki KOJIMA, Yutaka AKIYAMA, Mitsutoshi NAKAMURA, "Modeling a U-Shaped Gate MOSFET -A Model for Threshold Voltage-" in IEICE TRANSACTIONS on transactions, vol. E69-E, no. 4, pp. 243-245, April 1986, doi: .
Abstract: A new threshold voltage formula is derived for a U-shaped gate MOSFET where the gate oxide becomes thicker at both channel ends. It is found that when charge-sharing effect due to source/drain-junctions is not accounted for, threshold voltage increases with decreasing channel length, exhibiting an inverse short-channel effect (ISCE). When charge-sharing effect is taken into account, the ISCE reduces remarkably, resulting in a flat threshold voltage characteristic over a wide range of channel lengths. Computer simulations using a two-dimensional device simulator show a good agreement with these analytical findings.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_243/_p

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@ARTICLE{e69-e_4_243,
author={Ryo DANG, Toshiaki KOJIMA, Yutaka AKIYAMA, Mitsutoshi NAKAMURA, },
journal={IEICE TRANSACTIONS on transactions},
title={Modeling a U-Shaped Gate MOSFET -A Model for Threshold Voltage-},
year={1986},
volume={E69-E},
number={4},
pages={243-245},
abstract={A new threshold voltage formula is derived for a U-shaped gate MOSFET where the gate oxide becomes thicker at both channel ends. It is found that when charge-sharing effect due to source/drain-junctions is not accounted for, threshold voltage increases with decreasing channel length, exhibiting an inverse short-channel effect (ISCE). When charge-sharing effect is taken into account, the ISCE reduces remarkably, resulting in a flat threshold voltage characteristic over a wide range of channel lengths. Computer simulations using a two-dimensional device simulator show a good agreement with these analytical findings.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Modeling a U-Shaped Gate MOSFET -A Model for Threshold Voltage-
T2 - IEICE TRANSACTIONS on transactions
SP - 243
EP - 245
AU - Ryo DANG
AU - Toshiaki KOJIMA
AU - Yutaka AKIYAMA
AU - Mitsutoshi NAKAMURA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - A new threshold voltage formula is derived for a U-shaped gate MOSFET where the gate oxide becomes thicker at both channel ends. It is found that when charge-sharing effect due to source/drain-junctions is not accounted for, threshold voltage increases with decreasing channel length, exhibiting an inverse short-channel effect (ISCE). When charge-sharing effect is taken into account, the ISCE reduces remarkably, resulting in a flat threshold voltage characteristic over a wide range of channel lengths. Computer simulations using a two-dimensional device simulator show a good agreement with these analytical findings.
ER -