Superconducting Y-Ba-Cu Oxide Films as-Grown by RF Diode Sputtering

Mikihiro WATANABE; Atsushi MATACHI; Teruo ISHIBASHI; Atsushi NOYA; Shinya KURIKI

Superconducting Y-Ba-Cu Oxide Films as-Grown by RF Diode Sputtering

Mikihiro WATANABE, Atsushi MATACHI, Teruo ISHIBASHI, Atsushi NOYA, Shinya KURIKI

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Y-Ba-Cu-O films sputter-deposited at about 650 in high oxygen concentration gas are superconductive without heat treatment after the deposition. The films of 700 nm thickness have T_c _end of 72 K on SrTiO₃ and 65 K on sapphire substrates. Reduced interdiffusion, compared with post-annealed films at high temperatures, between the film and the substrate is confirmed.

Publication: IEICE TRANSACTIONS on transactions Vol.E71-E No.4 pp.283-285

Publication Date: 1988/04/25

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Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1988 Spring Convention IEICE)

Category: Superconductivity Electronics

Authors

Mikihiro WATANABE
Atsushi MATACHI
Teruo ISHIBASHI
Atsushi NOYA
Shinya KURIKI

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Mikihiro WATANABE, Atsushi MATACHI, Teruo ISHIBASHI, Atsushi NOYA, Shinya KURIKI, "Superconducting Y-Ba-Cu Oxide Films as-Grown by RF Diode Sputtering" in IEICE TRANSACTIONS on transactions, vol. E71-E, no. 4, pp. 283-285, April 1988, doi: .
Abstract: Y-Ba-Cu-O films sputter-deposited at about 650 in high oxygen concentration gas are superconductive without heat treatment after the deposition. The films of 700 nm thickness have T_c _end of 72 K on SrTiO₃ and 65 K on sapphire substrates. Reduced interdiffusion, compared with post-annealed films at high temperatures, between the film and the substrate is confirmed.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e71-e_4_283/_p

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@ARTICLE{e71-e_4_283,
author={Mikihiro WATANABE, Atsushi MATACHI, Teruo ISHIBASHI, Atsushi NOYA, Shinya KURIKI, },
journal={IEICE TRANSACTIONS on transactions},
title={Superconducting Y-Ba-Cu Oxide Films as-Grown by RF Diode Sputtering},
year={1988},
volume={E71-E},
number={4},
pages={283-285},
abstract={Y-Ba-Cu-O films sputter-deposited at about 650 in high oxygen concentration gas are superconductive without heat treatment after the deposition. The films of 700 nm thickness have T_c _end of 72 K on SrTiO₃ and 65 K on sapphire substrates. Reduced interdiffusion, compared with post-annealed films at high temperatures, between the film and the substrate is confirmed.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Superconducting Y-Ba-Cu Oxide Films as-Grown by RF Diode Sputtering
T2 - IEICE TRANSACTIONS on transactions
SP - 283
EP - 285
AU - Mikihiro WATANABE
AU - Atsushi MATACHI
AU - Teruo ISHIBASHI
AU - Atsushi NOYA
AU - Shinya KURIKI
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1988
AB - Y-Ba-Cu-O films sputter-deposited at about 650 in high oxygen concentration gas are superconductive without heat treatment after the deposition. The films of 700 nm thickness have T_c _end of 72 K on SrTiO₃ and 65 K on sapphire substrates. Reduced interdiffusion, compared with post-annealed films at high temperatures, between the film and the substrate is confirmed.
ER -