Bi(Pb)-Sr-Ca-Cu-O Films Prepared by dc Sputtering with Mosaic Target

Tadayuki KOBAYASHI; Masataka MORIYA; Kouichi USAMI; Toshinari GOTO; Xing Bao YING; Makoto HATANAKA

Bi(Pb)-Sr-Ca-Cu-O Films Prepared by dc Sputtering with Mosaic Target

Tadayuki KOBAYASHI, Masataka MORIYA, Kouichi USAMI, Toshinari GOTO, Xing Bao YING, Makoto HATANAKA

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B(P)SCCO films were prepared on MgO substrate by a double cathode dc sputtering with a mosaic Bi_χSrCaCu_yO_z and (Bi_0.7Pb_0.3)_χ SrCaCu_yO_z target. The films were deposited at 200 and 550, and then annealed. We have obtained the B(P)SCCO films with T_c of 90-100 K under the condition of the deposition at 550 and the in-situ annealing in 200 Torr O₂ and the post-deposition annealing at 860.

Publication: IEICE TRANSACTIONS on transactions Vol.E72-E No.10 pp.1072-1074

Publication Date: 1989/10/25

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Type of Manuscript: Special Section LETTER (Special Issue on 1989 Autumn National Convention IEICE)

Category: Superconductivity Electronics

Authors

Tadayuki KOBAYASHI
Masataka MORIYA
Kouichi USAMI
Toshinari GOTO
Xing Bao YING
Makoto HATANAKA

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Tadayuki KOBAYASHI, Masataka MORIYA, Kouichi USAMI, Toshinari GOTO, Xing Bao YING, Makoto HATANAKA, "Bi(Pb)-Sr-Ca-Cu-O Films Prepared by dc Sputtering with Mosaic Target" in IEICE TRANSACTIONS on transactions, vol. E72-E, no. 10, pp. 1072-1074, October 1989, doi: .
Abstract: B(P)SCCO films were prepared on MgO substrate by a double cathode dc sputtering with a mosaic Bi_χSrCaCu_yO_z and (Bi_0.7Pb_0.3)_χ SrCaCu_yO_z target. The films were deposited at 200 and 550, and then annealed. We have obtained the B(P)SCCO films with T_c of 90-100 K under the condition of the deposition at 550 and the in-situ annealing in 200 Torr O₂ and the post-deposition annealing at 860.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e72-e_10_1072/_p

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@ARTICLE{e72-e_10_1072,
author={Tadayuki KOBAYASHI, Masataka MORIYA, Kouichi USAMI, Toshinari GOTO, Xing Bao YING, Makoto HATANAKA, },
journal={IEICE TRANSACTIONS on transactions},
title={Bi(Pb)-Sr-Ca-Cu-O Films Prepared by dc Sputtering with Mosaic Target},
year={1989},
volume={E72-E},
number={10},
pages={1072-1074},
abstract={B(P)SCCO films were prepared on MgO substrate by a double cathode dc sputtering with a mosaic Bi_χSrCaCu_yO_z and (Bi_0.7Pb_0.3)_χ SrCaCu_yO_z target. The films were deposited at 200 and 550, and then annealed. We have obtained the B(P)SCCO films with T_c of 90-100 K under the condition of the deposition at 550 and the in-situ annealing in 200 Torr O₂ and the post-deposition annealing at 860.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Bi(Pb)-Sr-Ca-Cu-O Films Prepared by dc Sputtering with Mosaic Target
T2 - IEICE TRANSACTIONS on transactions
SP - 1072
EP - 1074
AU - Tadayuki KOBAYASHI
AU - Masataka MORIYA
AU - Kouichi USAMI
AU - Toshinari GOTO
AU - Xing Bao YING
AU - Makoto HATANAKA
PY - 1989
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E72-E
IS - 10
JA - IEICE TRANSACTIONS on transactions
Y1 - October 1989
AB - B(P)SCCO films were prepared on MgO substrate by a double cathode dc sputtering with a mosaic Bi_χSrCaCu_yO_z and (Bi_0.7Pb_0.3)_χ SrCaCu_yO_z target. The films were deposited at 200 and 550, and then annealed. We have obtained the B(P)SCCO films with T_c of 90-100 K under the condition of the deposition at 550 and the in-situ annealing in 200 Torr O₂ and the post-deposition annealing at 860.
ER -