This paper describes a programmable differential bandgap reference (PD-BGR) for ultra-low-power IoT (Internet-of-Things) edge node devices. The PD-BGR consists of a current generator (CG) and differential voltage generator (DVG). The CG is based on a bandgap reference (BGR) and generates an operating current and a voltage, while the DVG generates another voltage from the current. A differential voltage reference can be obtained by taking the voltage difference from the voltages. The PD-BGR can produce a programmable differential output voltage by changing the multipliers of MOSFETs in a differential pair and resistance with digital codes. Simulation results showed that the proposed PD-BGR can generate 25- to 200-mV reference voltages with a 25-mV step within a ±0.7% temperature inaccuracy in a temperature range from -20 to 100°C. A Monte Carlo simulation showed that the coefficient of the variation in the reference was within 1.1%. Measurement results demonstrated that our prototype chips can generate stable programmable differential output voltages, almost the same results as those of the simulation. The average power consumption was only 88.4 nW, with a voltage error of -4/+3 mV with 5 samples.

Extremely low-voltage charge pump (ELV-CP) and its dedicated multi-stage driver (MS-DRV) for sub-60-mV thermoelectric energy harvesting are proposed. The proposed MS-DRV utilizes the output voltages of each ELV-CP to efficiently boost the control clock signals. The boosted clock signals are used as switching signals for each ELV-CP and MS-DRV to turn switch transistors on and off. Moreover, reset transistors are added to the MS-DRV to ensure an adequate non-overlapping period between switching signals. Measurement results demonstrated that the proposed MS-DRV can generate boosted clock signals of 350 mV from input voltage of 60 mV. The ELV-CP can boost the input voltage of 100 mV with 10.7% peak efficiency. The proposed ELV-CP and MS-DRV can boost the low input voltage of 56 mV.