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[Author] Hiroki MUTA(1hit)

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  • High Speed DSA 4 Kbit Static RAM

    Mitsutaka MORIMOTO  Kazukiyo TAKAHASHI  Hiroki MUTA  

     
    PAPER-Integrated Circuits

      Vol:
    E63-E No:7
      Page(s):
    520-525

    A high speed, 4 K word by one bit static Random Access Memory (RAM) has been developed, using Diffusion Self-Aligned (DSA) MOS technology. High speed and low power operation was achieved by combining the following refined devices and new circuit technology; high gain DSA MOS FETs as drivers, Reverse DSA (RDSA) MOS FETs with low threshold voltage (VTAR0 V) as power reduction switches, full wave rectifier substrate bias generator and dual X-decoder circuits. The present RAM operates on a single 51 V external power supply. Its typical performances are; 28 ns chip enable access time (CL33 pF), 300 mW active power dissipation and 50 mW stand-by power dissipation.