A high speed, 4 K word by one bit static Random Access Memory (RAM) has been developed, using Diffusion Self-Aligned (DSA) MOS technology. High speed and low power operation was achieved by combining the following refined devices and new circuit technology; high gain DSA MOS FETs as drivers, Reverse DSA (RDSA) MOS FETs with low threshold voltage (VTAR0 V) as power reduction switches, full wave rectifier substrate bias generator and dual X-decoder circuits. The present RAM operates on a single 51 V external power supply. Its typical performances are; 28 ns chip enable access time (CL33 pF), 300 mW active power dissipation and 50 mW stand-by power dissipation.

This paper describes a design of a Carry Propagation Free Adder/Subtracter (CPFA/S) VLSI using the Adiabatic Dynamic CMOS Logic (ADCL) circuit technology. Using a PSPICE simulator, energy dissipation of the ADCL 1 bit CPFA/S is compared with that of the CMOS 1 bit CPFA/S. As a result, energy dissipation of the proposed ADCL circuits is about 1/3 as high as that of the CMOS circuits. The transistors count, propagation-delay time and energy dissipation of the ADCL 4 bit CPFA/S are compared with those of the ADCL 4 bit Ripple Carry Adder/Subtracter (RCA/S). The transistors count and propagation-delay time are found to be reduced by 7.02% and 57.1%, respectively. Also, energy dissipation is found to be reduced by 78.4%. Circuit operation and performance are evaluated using a chain of the ADCL 1 bit CPFA/S fabricated in a 1.2 µm CMOS process. The experimental results show that addition and subtraction are operated with clock frequencies up to about 1 MHz. In addition, the total power dissipation of the ADCL 1 bit CPFA/S is 28.7 µW including the power supply.