Bi2Sr2CuOx (Bi(2201)) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.010-5 Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi(2201) is formed at the early deposition stage of less than 10 units cell and then Bi(2201) oriented along the c-axis is grown.