Epitaxial Growth of Bi (2201) Phase in Atomic Layer-by-Layer Deposition by Ion Beam Sputtering Method

Kazuo SAKAI; Shinji MIGITA; Hiroyuki OTA; Hiroshi OTERA; Ryozo AOKI

Epitaxial Growth of Bi (2201) Phase in Atomic Layer-by-Layer Deposition by Ion Beam Sputtering Method

Kazuo SAKAI, Shinji MIGITA, Hiroyuki OTA, Hiroshi OTERA, Ryozo AOKI

Full Text Views

0

Cite this

Summary :

Bi₂Sr₂CuO_x (Bi(2201)) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.010^-5 Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi(2201) is formed at the early deposition stage of less than 10 units cell and then Bi(2201) oriented along the c-axis is grown.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.8 pp.1246-1250

Publication Date: 1993/08/25

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Issue on High-Temperature Superconducting Electronics)

Category

Cite this

Copy

Kazuo SAKAI, Shinji MIGITA, Hiroyuki OTA, Hiroshi OTERA, Ryozo AOKI, "Epitaxial Growth of Bi (2201) Phase in Atomic Layer-by-Layer Deposition by Ion Beam Sputtering Method" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 8, pp. 1246-1250, August 1993, doi: .
Abstract: Bi₂Sr₂CuO_x (Bi(2201)) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.010^-5 Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi(2201) is formed at the early deposition stage of less than 10 units cell and then Bi(2201) oriented along the c-axis is grown.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_8_1246/_p

Copy

@ARTICLE{e76-c_8_1246,
author={Kazuo SAKAI, Shinji MIGITA, Hiroyuki OTA, Hiroshi OTERA, Ryozo AOKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Epitaxial Growth of Bi (2201) Phase in Atomic Layer-by-Layer Deposition by Ion Beam Sputtering Method},
year={1993},
volume={E76-C},
number={8},
pages={1246-1250},
abstract={Bi₂Sr₂CuO_x (Bi(2201)) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.010^-5 Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi(2201) is formed at the early deposition stage of less than 10 units cell and then Bi(2201) oriented along the c-axis is grown.},
keywords={},
doi={},
ISSN={},
month={August},}

Copy

TY - JOUR
TI - Epitaxial Growth of Bi (2201) Phase in Atomic Layer-by-Layer Deposition by Ion Beam Sputtering Method
T2 - IEICE TRANSACTIONS on Electronics
SP - 1246
EP - 1250
AU - Kazuo SAKAI
AU - Shinji MIGITA
AU - Hiroyuki OTA
AU - Hiroshi OTERA
AU - Ryozo AOKI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1993
AB - Bi₂Sr₂CuO_x (Bi(2201)) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.010^-5 Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi(2201) is formed at the early deposition stage of less than 10 units cell and then Bi(2201) oriented along the c-axis is grown.
ER -