The Cooper pairing interaction in high Tc oxide superconductor is discussed in terms of an empirical expression; TcDexp[1/g], gcωo which was derived in our previous investigation. The dual character of this expression consisting of the phonon Debye temperature D and electronic excitation ωo in the mid-infrared region can be interpreted on the basis of the phonon-assisted mechanism on carrier conduction and the electronic excitation. A tunneling spectrum here presented shows certain evidence of the phonon contribution. The characteristics of the long range superconductive proximity phenomena recently reported are also may be interpreted by this mechanism.

Bi2Sr2CuOx (Bi(2201)) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.010-5 Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi(2201) is formed at the early deposition stage of less than 10 units cell and then Bi(2201) oriented along the c-axis is grown.

In order to investigate the characteristics of the superconducting gap structures of BSCCO oxide superconductor, tunneling spectrum measurements were carried out with several junctions on the bulk single crystal surfaces. Point contact tunneling studies by means of the M/I/S and S/(I)/S junctions have shown the reproducible gap values, 2Δ (//c-axis) of 402 meV, at the cleaved crystal surfaces, and the ratio of 2Δ(//)/kBTc5.50.3 indicates the strong coupling superconductor of this material. Somewhat larger gap values, 2Δmax(c-axis)701 meV, have been also observed at the lateral surface, and these various gap values observed on each surface of the same crystal indicate the characteristic of the large gap anisotropy, Δ()/Δ(//)1.8, of this material.