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[Author] Ilku NAM(2hit)

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  • Low Noise and Highly Linear Wideband CMOS RF Front-End for DVB-H Direct-Conversion Receiver

    Ilku NAM  Hyunwon MOON  Doo Hyung WOO  

     
    LETTER-Wireless Communication Technologies

      Vol:
    E95-B No:7
      Page(s):
    2498-2500

    In this paper, a wideband CMOS radio frequency (RF) front-end for digital video broadcasting-handheld (DVB-H) receiver is proposed. The RF front-end circuit is composed of a single-ended resistive feedback low noise amplifier (LNA), a single-to-differential amplifier, an I/Q down-conversion mixer with linearized transconductors employing third order intermodulation distortion cancellation, and a divide-by-two circuit with LO buffers. By employing a third order intermodulation (IMD3) cancellation technique and vertical NPN bipolar junction transistor (BJT) switching pair for an I/Q down-conversion mixer, the proposed RF front-end circuit has high linearity and low low-frequency noise performance. It is fabricated in a 0.18 µm deep n-well CMOS technology and draws 12 mA from a 1.8 V supply voltage. It shows a voltage gain of 31 dB, a noise figure (NF) lower than 2.6 dB, and an IIP3 of -8 dBm from 470 MHz to 862 MHz.

  • Fully Integrated CMOS PAs with Two-Winding and Single-Winding Combined Transformer for WLAN Applications

    Se-Eun CHOI  Hyunjin AHN  Hyunsik RYU  Ilku NAM  Ockgoo LEE  

     
    PAPER-Microwaves, Millimeter-Waves

      Vol:
    E101-C No:12
      Page(s):
    931-941

    Fully integrated CMOS power amplifiers (PAs) with a two-winding and single-winding combined transformer (TS transformer) are presented. The general analysis of the TS transformer and other power-combining transformers, i.e., the series-combining transformer and parallel-combining transformer, is presented in terms of the transformer design parameters. Compared with other power-combining transformers, the proposed power-combining TS transformer offers high-efficiency with a compact form factor. In addition, a fully integrated CMOS PA using the TS transformer with multi-gated transistors (MGTRs) and adaptive bias circuit has been proposed to improve linearity. The proposed PAs are implemented using 65-nm CMOS technology. The implemented PA with the TS transformer achieves a saturated output power of 26.7 dBm with drain efficiency (DE) of 47.7%. The PA achieves 20.13-dBm output power with 21.4% DE while satisfying the -25-dB error vector magnitude (EVM) requirement when tested with the WLAN 802.11g signal. The implemented PA using the TS transformer with MGTRs and adaptive bias circuit achieves the -30-dB EVM requirement up to an output power of 17.13 dBm with 10.43% DE when tested using the WLAN 802.11ac signal.