IEICE TRANSACTIONS on Communications
Low Noise and Highly Linear Wideband CMOS RF Front-End for DVB-H Direct-Conversion Receiver
Summary :
In this paper, a wideband CMOS radio frequency (RF) front-end for digital video broadcasting-handheld (DVB-H) receiver is proposed. The RF front-end circuit is composed of a single-ended resistive feedback low noise amplifier (LNA), a single-to-differential amplifier, an I/Q down-conversion mixer with linearized transconductors employing third order intermodulation distortion cancellation, and a divide-by-two circuit with LO buffers. By employing a third order intermodulation (IMD3) cancellation technique and vertical NPN bipolar junction transistor (BJT) switching pair for an I/Q down-conversion mixer, the proposed RF front-end circuit has high linearity and low low-frequency noise performance. It is fabricated in a 0.18 µm deep n-well CMOS technology and draws 12 mA from a 1.8 V supply voltage. It shows a voltage gain of 31 dB, a noise figure (NF) lower than 2.6 dB, and an IIP3 of -8 dBm from 470 MHz to 862 MHz.
- Publication
- IEICE TRANSACTIONS on Communications Vol.E95-B No.7 pp.2498-2500
- Publication Date
- 2012/07/01
- Publicized
- Online ISSN
- 1745-1345
- DOI
- 10.1587/transcom.E95.B.2498
- Type of Manuscript
- LETTER
- Category
- Wireless Communication Technologies
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Ilku NAM, Hyunwon MOON, Doo Hyung WOO, "Low Noise and Highly Linear Wideband CMOS RF Front-End for DVB-H Direct-Conversion Receiver" in IEICE TRANSACTIONS on Communications,
vol. E95-B, no. 7, pp. 2498-2500, July 2012, doi: 10.1587/transcom.E95.B.2498.
Abstract: In this paper, a wideband CMOS radio frequency (RF) front-end for digital video broadcasting-handheld (DVB-H) receiver is proposed. The RF front-end circuit is composed of a single-ended resistive feedback low noise amplifier (LNA), a single-to-differential amplifier, an I/Q down-conversion mixer with linearized transconductors employing third order intermodulation distortion cancellation, and a divide-by-two circuit with LO buffers. By employing a third order intermodulation (IMD3) cancellation technique and vertical NPN bipolar junction transistor (BJT) switching pair for an I/Q down-conversion mixer, the proposed RF front-end circuit has high linearity and low low-frequency noise performance. It is fabricated in a 0.18 µm deep n-well CMOS technology and draws 12 mA from a 1.8 V supply voltage. It shows a voltage gain of 31 dB, a noise figure (NF) lower than 2.6 dB, and an IIP3 of -8 dBm from 470 MHz to 862 MHz.
URL: https://global.ieice.org/en_transactions/communications/10.1587/transcom.E95.B.2498/_p
Copy
@ARTICLE{e95-b_7_2498,
author={Ilku NAM, Hyunwon MOON, Doo Hyung WOO, },
journal={IEICE TRANSACTIONS on Communications},
title={Low Noise and Highly Linear Wideband CMOS RF Front-End for DVB-H Direct-Conversion Receiver},
year={2012},
volume={E95-B},
number={7},
pages={2498-2500},
abstract={In this paper, a wideband CMOS radio frequency (RF) front-end for digital video broadcasting-handheld (DVB-H) receiver is proposed. The RF front-end circuit is composed of a single-ended resistive feedback low noise amplifier (LNA), a single-to-differential amplifier, an I/Q down-conversion mixer with linearized transconductors employing third order intermodulation distortion cancellation, and a divide-by-two circuit with LO buffers. By employing a third order intermodulation (IMD3) cancellation technique and vertical NPN bipolar junction transistor (BJT) switching pair for an I/Q down-conversion mixer, the proposed RF front-end circuit has high linearity and low low-frequency noise performance. It is fabricated in a 0.18 µm deep n-well CMOS technology and draws 12 mA from a 1.8 V supply voltage. It shows a voltage gain of 31 dB, a noise figure (NF) lower than 2.6 dB, and an IIP3 of -8 dBm from 470 MHz to 862 MHz.},
keywords={},
doi={10.1587/transcom.E95.B.2498},
ISSN={1745-1345},
month={July},}
Copy
TY - JOUR
TI - Low Noise and Highly Linear Wideband CMOS RF Front-End for DVB-H Direct-Conversion Receiver
T2 - IEICE TRANSACTIONS on Communications
SP - 2498
EP - 2500
AU - Ilku NAM
AU - Hyunwon MOON
AU - Doo Hyung WOO
PY - 2012
DO - 10.1587/transcom.E95.B.2498
JO - IEICE TRANSACTIONS on Communications
SN - 1745-1345
VL - E95-B
IS - 7
JA - IEICE TRANSACTIONS on Communications
Y1 - July 2012
AB - In this paper, a wideband CMOS radio frequency (RF) front-end for digital video broadcasting-handheld (DVB-H) receiver is proposed. The RF front-end circuit is composed of a single-ended resistive feedback low noise amplifier (LNA), a single-to-differential amplifier, an I/Q down-conversion mixer with linearized transconductors employing third order intermodulation distortion cancellation, and a divide-by-two circuit with LO buffers. By employing a third order intermodulation (IMD3) cancellation technique and vertical NPN bipolar junction transistor (BJT) switching pair for an I/Q down-conversion mixer, the proposed RF front-end circuit has high linearity and low low-frequency noise performance. It is fabricated in a 0.18 µm deep n-well CMOS technology and draws 12 mA from a 1.8 V supply voltage. It shows a voltage gain of 31 dB, a noise figure (NF) lower than 2.6 dB, and an IIP3 of -8 dBm from 470 MHz to 862 MHz.
ER -
English
