Fully Integrated CMOS PAs with Two-Winding and Single-Winding Combined Transformer for WLAN Applications

Se-Eun CHOI; Hyunjin AHN; Hyunsik RYU; Ilku NAM; Ockgoo LEE

doi:10.1587/transele.E101.C.931

Fully Integrated CMOS PAs with Two-Winding and Single-Winding Combined Transformer for WLAN Applications

Se-Eun CHOI, Hyunjin AHN, Hyunsik RYU, Ilku NAM, Ockgoo LEE

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Fully integrated CMOS power amplifiers (PAs) with a two-winding and single-winding combined transformer (TS transformer) are presented. The general analysis of the TS transformer and other power-combining transformers, i.e., the series-combining transformer and parallel-combining transformer, is presented in terms of the transformer design parameters. Compared with other power-combining transformers, the proposed power-combining TS transformer offers high-efficiency with a compact form factor. In addition, a fully integrated CMOS PA using the TS transformer with multi-gated transistors (MGTRs) and adaptive bias circuit has been proposed to improve linearity. The proposed PAs are implemented using 65-nm CMOS technology. The implemented PA with the TS transformer achieves a saturated output power of 26.7 dBm with drain efficiency (DE) of 47.7%. The PA achieves 20.13-dBm output power with 21.4% DE while satisfying the -25-dB error vector magnitude (EVM) requirement when tested with the WLAN 802.11g signal. The implemented PA using the TS transformer with MGTRs and adaptive bias circuit achieves the -30-dB EVM requirement up to an output power of 17.13 dBm with 10.43% DE when tested using the WLAN 802.11ac signal.

Publication: IEICE TRANSACTIONS on Electronics Vol.E101-C No.12 pp.931-941

Publication Date: 2018/12/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E101.C.931

Type of Manuscript: PAPER

Category: Microwaves, Millimeter-Waves

Authors

Se-Eun CHOI
  Pusan National University
Hyunjin AHN
  Pusan National University
Hyunsik RYU
  Pusan National University
Ilku NAM
  Pusan National University
Ockgoo LEE
  Pusan National University

Keyword

CMOS, power amplifier (PA), adaptive bias, multi-gated transistors, power-combining transformer

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Se-Eun CHOI, Hyunjin AHN, Hyunsik RYU, Ilku NAM, Ockgoo LEE, "Fully Integrated CMOS PAs with Two-Winding and Single-Winding Combined Transformer for WLAN Applications" in IEICE TRANSACTIONS on Electronics, vol. E101-C, no. 12, pp. 931-941, December 2018, doi: 10.1587/transele.E101.C.931.
Abstract: Fully integrated CMOS power amplifiers (PAs) with a two-winding and single-winding combined transformer (TS transformer) are presented. The general analysis of the TS transformer and other power-combining transformers, i.e., the series-combining transformer and parallel-combining transformer, is presented in terms of the transformer design parameters. Compared with other power-combining transformers, the proposed power-combining TS transformer offers high-efficiency with a compact form factor. In addition, a fully integrated CMOS PA using the TS transformer with multi-gated transistors (MGTRs) and adaptive bias circuit has been proposed to improve linearity. The proposed PAs are implemented using 65-nm CMOS technology. The implemented PA with the TS transformer achieves a saturated output power of 26.7 dBm with drain efficiency (DE) of 47.7%. The PA achieves 20.13-dBm output power with 21.4% DE while satisfying the -25-dB error vector magnitude (EVM) requirement when tested with the WLAN 802.11g signal. The implemented PA using the TS transformer with MGTRs and adaptive bias circuit achieves the -30-dB EVM requirement up to an output power of 17.13 dBm with 10.43% DE when tested using the WLAN 802.11ac signal.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.931/_p

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@ARTICLE{e101-c_12_931,
author={Se-Eun CHOI, Hyunjin AHN, Hyunsik RYU, Ilku NAM, Ockgoo LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fully Integrated CMOS PAs with Two-Winding and Single-Winding Combined Transformer for WLAN Applications},
year={2018},
volume={E101-C},
number={12},
pages={931-941},
abstract={Fully integrated CMOS power amplifiers (PAs) with a two-winding and single-winding combined transformer (TS transformer) are presented. The general analysis of the TS transformer and other power-combining transformers, i.e., the series-combining transformer and parallel-combining transformer, is presented in terms of the transformer design parameters. Compared with other power-combining transformers, the proposed power-combining TS transformer offers high-efficiency with a compact form factor. In addition, a fully integrated CMOS PA using the TS transformer with multi-gated transistors (MGTRs) and adaptive bias circuit has been proposed to improve linearity. The proposed PAs are implemented using 65-nm CMOS technology. The implemented PA with the TS transformer achieves a saturated output power of 26.7 dBm with drain efficiency (DE) of 47.7%. The PA achieves 20.13-dBm output power with 21.4% DE while satisfying the -25-dB error vector magnitude (EVM) requirement when tested with the WLAN 802.11g signal. The implemented PA using the TS transformer with MGTRs and adaptive bias circuit achieves the -30-dB EVM requirement up to an output power of 17.13 dBm with 10.43% DE when tested using the WLAN 802.11ac signal.},
keywords={},
doi={10.1587/transele.E101.C.931},
ISSN={1745-1353},
month={December},}

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TY - JOUR
TI - Fully Integrated CMOS PAs with Two-Winding and Single-Winding Combined Transformer for WLAN Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 931
EP - 941
AU - Se-Eun CHOI
AU - Hyunjin AHN
AU - Hyunsik RYU
AU - Ilku NAM
AU - Ockgoo LEE
PY - 2018
DO - 10.1587/transele.E101.C.931
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2018
AB - Fully integrated CMOS power amplifiers (PAs) with a two-winding and single-winding combined transformer (TS transformer) are presented. The general analysis of the TS transformer and other power-combining transformers, i.e., the series-combining transformer and parallel-combining transformer, is presented in terms of the transformer design parameters. Compared with other power-combining transformers, the proposed power-combining TS transformer offers high-efficiency with a compact form factor. In addition, a fully integrated CMOS PA using the TS transformer with multi-gated transistors (MGTRs) and adaptive bias circuit has been proposed to improve linearity. The proposed PAs are implemented using 65-nm CMOS technology. The implemented PA with the TS transformer achieves a saturated output power of 26.7 dBm with drain efficiency (DE) of 47.7%. The PA achieves 20.13-dBm output power with 21.4% DE while satisfying the -25-dB error vector magnitude (EVM) requirement when tested with the WLAN 802.11g signal. The implemented PA using the TS transformer with MGTRs and adaptive bias circuit achieves the -30-dB EVM requirement up to an output power of 17.13 dBm with 10.43% DE when tested using the WLAN 802.11ac signal.
ER -