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Young Su KIM Min Ho KANG Kang Suk JEONG Jae Sub OH Yu Mi KIM Dong Eun YOO Hi Deok LEE Ga Won LEE
We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO2/Si substrates at 100. And the thickness of ZnO film is compared with 100-nm and 40-nm. This TFT has a channel width of 100-µm and channel length of 5-µm. The fabricated coplanar dual-gate ZnO TFTs of 40-nm-thickness exhibits a field effect mobility of about 0.29 cm2/V s, a subthreshold swing 420 mV/decade, an on-off ratio 2.7107, and a threshold voltage 0.9 V, which are greatly improved characteristics, compared with conventional bottom-gate ZnO TFTs.