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Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer
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We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO2/Si substrates at 100
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.786-790
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.786
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
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Young Su KIM, Min Ho KANG, Kang Suk JEONG, Jae Sub OH, Yu Mi KIM, Dong Eun YOO, Hi Deok LEE, Ga Won LEE, "Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 786-790, May 2011, doi: 10.1587/transele.E94.C.786.
Abstract: We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO2/Si substrates at 100
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.786/_p
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@ARTICLE{e94-c_5_786,
author={Young Su KIM, Min Ho KANG, Kang Suk JEONG, Jae Sub OH, Yu Mi KIM, Dong Eun YOO, Hi Deok LEE, Ga Won LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer},
year={2011},
volume={E94-C},
number={5},
pages={786-790},
abstract={We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO2/Si substrates at 100
keywords={},
doi={10.1587/transele.E94.C.786},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 786
EP - 790
AU - Young Su KIM
AU - Min Ho KANG
AU - Kang Suk JEONG
AU - Jae Sub OH
AU - Yu Mi KIM
AU - Dong Eun YOO
AU - Hi Deok LEE
AU - Ga Won LEE
PY - 2011
DO - 10.1587/transele.E94.C.786
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO2/Si substrates at 100
ER -
English
