A high frequency MOSFET model is presented. This model takes into account the electron mobility reduction due to the normal and parallel fields. By using a frequency power series, an analytic second order expression for the intrinsic admittance parameters is obtained. This intrinsic admittance model is first simplified and then completed by the external elements, measured, or calculated in the case of the high frequency lateral type structure. The proposed model shows that the two-field-dependent mobility effect reduces the unilateral power gain by maximum 2 dB compared to the one-field-dependent mobility and constant mobility models. The proposed model gives a good prediction of the scattering parameters measured from 50 to 200 MHz. The average deviation of the calculated unilateral power gain from the measured values is 1.86 dB.