Small-Signal High Frequency MOSFET Model Considering Two-Field-Dependent Mobility Effect
Summary :
A high frequency MOSFET model is presented. This model takes into account the electron mobility reduction due to the normal and parallel fields. By using a frequency power series, an analytic second order expression for the intrinsic admittance parameters is obtained. This intrinsic admittance model is first simplified and then completed by the external elements, measured, or calculated in the case of the high frequency lateral type structure. The proposed model shows that the two-field-dependent mobility effect reduces the unilateral power gain by maximum 2 dB compared to the one-field-dependent mobility and constant mobility models. The proposed model gives a good prediction of the scattering parameters measured from 50 to 200 MHz. The average deviation of the calculated unilateral power gain from the measured values is 1.86 dB.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E76-A No.2 pp.193-203
- Publication Date
- 1993/02/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Section on High-Speed Analog Circuits and Signal Processing)
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Laredj BELABAS, Nobuo FUJII, Shigetaka TAKAGI, "Small-Signal High Frequency MOSFET Model Considering Two-Field-Dependent Mobility Effect" in IEICE TRANSACTIONS on Fundamentals,
vol. E76-A, no. 2, pp. 193-203, February 1993, doi: .
Abstract: A high frequency MOSFET model is presented. This model takes into account the electron mobility reduction due to the normal and parallel fields. By using a frequency power series, an analytic second order expression for the intrinsic admittance parameters is obtained. This intrinsic admittance model is first simplified and then completed by the external elements, measured, or calculated in the case of the high frequency lateral type structure. The proposed model shows that the two-field-dependent mobility effect reduces the unilateral power gain by maximum 2 dB compared to the one-field-dependent mobility and constant mobility models. The proposed model gives a good prediction of the scattering parameters measured from 50 to 200 MHz. The average deviation of the calculated unilateral power gain from the measured values is 1.86 dB.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e76-a_2_193/_p
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@ARTICLE{e76-a_2_193,
author={Laredj BELABAS, Nobuo FUJII, Shigetaka TAKAGI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Small-Signal High Frequency MOSFET Model Considering Two-Field-Dependent Mobility Effect},
year={1993},
volume={E76-A},
number={2},
pages={193-203},
abstract={A high frequency MOSFET model is presented. This model takes into account the electron mobility reduction due to the normal and parallel fields. By using a frequency power series, an analytic second order expression for the intrinsic admittance parameters is obtained. This intrinsic admittance model is first simplified and then completed by the external elements, measured, or calculated in the case of the high frequency lateral type structure. The proposed model shows that the two-field-dependent mobility effect reduces the unilateral power gain by maximum 2 dB compared to the one-field-dependent mobility and constant mobility models. The proposed model gives a good prediction of the scattering parameters measured from 50 to 200 MHz. The average deviation of the calculated unilateral power gain from the measured values is 1.86 dB.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Small-Signal High Frequency MOSFET Model Considering Two-Field-Dependent Mobility Effect
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 193
EP - 203
AU - Laredj BELABAS
AU - Nobuo FUJII
AU - Shigetaka TAKAGI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E76-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 1993
AB - A high frequency MOSFET model is presented. This model takes into account the electron mobility reduction due to the normal and parallel fields. By using a frequency power series, an analytic second order expression for the intrinsic admittance parameters is obtained. This intrinsic admittance model is first simplified and then completed by the external elements, measured, or calculated in the case of the high frequency lateral type structure. The proposed model shows that the two-field-dependent mobility effect reduces the unilateral power gain by maximum 2 dB compared to the one-field-dependent mobility and constant mobility models. The proposed model gives a good prediction of the scattering parameters measured from 50 to 200 MHz. The average deviation of the calculated unilateral power gain from the measured values is 1.86 dB.
ER -
English
