A 100MIPS high speed and low power fixed point Digital Signal Processor (DSP) has been developed applying 0.45µm CMOS TLM technology. The DSP contains a 16-bit32K full CMOS static RAM with a hierarchical low power architecture. The device is a RAM based DSP with a total of 4.2 million transistors and a new low power design and process which enabled an approximate 50% reduction in power as compared to conventional DSPs at 40 MHz. In order to cover very wide application requirements, this DSP is capable of operating at 1.0 V for DSP core and 3.3 V for I/O. This was achieved by new level shifter circuitry to interface with cost effective 3 V external commodity products and confirmed 80% of power reduction at Core VDD=2.0 V, I/O VDD=3.3 V at 40MHz. This paper describes the new features of the high speed and low power DSP.

A new high-speed and low-power digital signal processor (DSP) core, C55x, was developed for next generation applications such as 3G cellular phone, PDA, digital still camera (DSC), audio, video, embedded modem, DVD, and so on. To support such MIPS-rich applications, a packet size of an instruction fetch increased from 16-bit to 32-bit comparing with the world's most popular C54x DSP core, while maintaining complete software compatibility with the legacy DSP code. An on-chip instruction buffer queue (IBQ) automatically unpacks the packets and issues multiple instructions in parallel for the efficient use of circuit resources. The efficiency of the parallelism has been further improved by additional hardwares such as second 1717-bit MAC, a 16-bit ALU, and three temporary registers that can be used for simple computations. Four 40-bit accumulators make it possible to execute more operation per cycle with dramatically reduced overall power consumption. These new architecture allows two times efficiency of instruction per cycle (IPC) than the previous DSP core on typical applications at the same MHz. The new DSP core was designed for TI's two 130 nm technologies, one with high-VT for low-leakage and middle-performance operation at 1.5 V, and the other with low-VT for high-performance and low-VDD operation at 1.2 V, to provide best choices for any applications with a single layout data base. With the low-leakage process, the DSP core operates at over 200 MHz with 188 µA/MHz (at 75% Dual MAC + 25% ADD) active power and less than 1.63 µA standby current. The high-performance process provides it with 300 MHz with 169 µA/MHz active power and less than 680 µA standby current. The new core was designed by a semi-custom approach (ASIC + custom library) using 5-level Cu metal system with low-k dielectric material of fluorosilicate glass (FSG), and about one million transistors are contained in the core. The total balance of its power, performance, area, and leakage current (PPAL) is well suitable to most of next generation applications. In this paper, we will discuss features of the new DSP core, including circuit design techniques for high-speed and low-power, and present an example product.