1-3hit |
A new simulation system, which is composed of two-dimensional process simulator and inference engine, has been developed as one of the prototype systems for analysing process tolerance and fluctuation in individual process parameters. A general concept of the system, algorithm of process fluctuation analysis and inference engine of AI software package are presented. Typical evidences of results obtained are also demonstrated.
Naoyuki SHIGYO Shinji ONGA Makoto YOSHIMI Kenji TANIGUCHI
Hot carrier effects in narrow-channel MOSETs are investigated. With decreasing channel width below 1µm, the ratio of substrate to channel currents show marked increase. By using the newly developed full three-dimensional process/device simulation system, two significant causes of the hot carrier effects are clarified.
Shigeru KAWANAKA Shinji ONGA Takako OKADA Michihiro OOSE Toshihiko IINUMA Tomoaki SHINO Takashi YAMADA Makoto YOSHIMI Shigeyoshi WATANABE
Anomalous leakage current which flows between source and drain in thin film SOI MOSFET's is investigated. It is confirmed that the leakage current is caused by enhanced diffusion of the source/drain dopants along the LOCOS-induced crystal defects. Stress analysis by 2D simulation reveals that thinning a buried-oxide effectively suppresses deformation of an SOI film associated with over-oxidation during LOCOS. It is experimentally confirmed that using a SIMOX substrate which has a thinner buried-oxide causes no noticeable deformation of the SOI film nor anomalous leakage current.