IEICE TRANSACTIONS on transactions
Three-Dimensional Simulation of Hot Carrier Effects in Submicron MOSFETs
Summary :
Hot carrier effects in narrow-channel MOSETs are investigated. With decreasing channel width below 1µm, the ratio of substrate to channel currents show marked increase. By using the newly developed full three-dimensional process/device simulation system, two significant causes of the hot carrier effects are clarified.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.248-250
- Publication Date
- 1986/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
- Category
- Silicon Devices and Integrated Circuits
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Keyword
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Naoyuki SHIGYO, Shinji ONGA, Makoto YOSHIMI, Kenji TANIGUCHI, "Three-Dimensional Simulation of Hot Carrier Effects in Submicron MOSFETs" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 4, pp. 248-250, April 1986, doi: .
Abstract: Hot carrier effects in narrow-channel MOSETs are investigated. With decreasing channel width below 1µm, the ratio of substrate to channel currents show marked increase. By using the newly developed full three-dimensional process/device simulation system, two significant causes of the hot carrier effects are clarified.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_248/_p
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@ARTICLE{e69-e_4_248,
author={Naoyuki SHIGYO, Shinji ONGA, Makoto YOSHIMI, Kenji TANIGUCHI, },
journal={IEICE TRANSACTIONS on transactions},
title={Three-Dimensional Simulation of Hot Carrier Effects in Submicron MOSFETs},
year={1986},
volume={E69-E},
number={4},
pages={248-250},
abstract={Hot carrier effects in narrow-channel MOSETs are investigated. With decreasing channel width below 1µm, the ratio of substrate to channel currents show marked increase. By using the newly developed full three-dimensional process/device simulation system, two significant causes of the hot carrier effects are clarified.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Three-Dimensional Simulation of Hot Carrier Effects in Submicron MOSFETs
T2 - IEICE TRANSACTIONS on transactions
SP - 248
EP - 250
AU - Naoyuki SHIGYO
AU - Shinji ONGA
AU - Makoto YOSHIMI
AU - Kenji TANIGUCHI
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - Hot carrier effects in narrow-channel MOSETs are investigated. With decreasing channel width below 1µm, the ratio of substrate to channel currents show marked increase. By using the newly developed full three-dimensional process/device simulation system, two significant causes of the hot carrier effects are clarified.
ER -
English
