1-3hit |
Shoichiro KAWASHIMA Tetsuyoshi SHIOTA Isao FUKUSHI Ryuhei SASAGAWA Wataru SHIBAMOTO Atsushi TSUCHIYA Teruo ISHIHARA
An 1 V, 50 MHz, 16-bit DSP core was developed using a 0.25-µm Dual Vt library, SRAM, and Mask ROM tailored for 1 V operation. The core speed was 41% enhanced using an alternate MAC and 2-stage execution pipeline. A 1.0 V to 1.5 V voltage up converter with 59% power efficiency and a 450 ps 1 V to 2.5 V level converter were implemented. An new long wire delay estimation method enhanced the synthesis. The measured power consumption at 0.9 V was 8.7 mW, which was 40% less than the power of the normal library's at 1.3 V, when the PSI-CELP CODEC firmware was run at 40 MHz.
Shoichiro KAWASHIMA Isao FUKUSHI Keizo MORITA Ken-ichi NAKABAYASHI Mitsuharu NAKAZAWA Kazuaki YAMANE Tomohisa HIRAYAMA Toru ENDO
A robust 1T1C FeRAM sensing technique is demonstrated that employs both word base access and reference level generation architecture to track the thermal history of the cells by utilizing a Feedback inverter Input Push-down (FIP) method for a Bit line Ground Sensing (BGS) pre-amplifier and a self-timing latch Sense Amplifier (SA) which is immune to increasing non-switching charges due to thermal depolarization or imprint of ferroelectric capacitor. The word base access unit consists of one 2T2C cell that stores 0/1 data and also generates '0' and '1' reference levels by which other 1T1C signals are compared. A 0.18-µm CMOS 3-V 1-Mbit device was qualified by a 250 bake for a short time retention and 150 1000-hour bake which is an accelerated equivalent to 10-years retention. It endured 1012 fatigue cycles with an access time of 81 ns, 3.0 V VDD at 85. Also a Smart Card application chip which is embedded with the 1-Mbit FeRAM macro showed 30% faster download time than one with EEPROM.
Shoichiro KAWASHIMA Keizo MORITA Mitsuharu NAKAZAWA Kazuaki YAMANE Mitsuhiro OGAI Kuninori KAWABATA Kazuaki TAKAI Yasuhiro FUJII Ryoji YASUDA Wensheng WANG Yukinobu HIKOSAKA Ken'ichi INOUE
An 8-Mbit 0.18-µm CMOS 1T1C ferroelectric RAM (FeRAM) in a planar ferroelectric technology was developed. Even though the cell area of 2.48 µm2 is almost equal to that of a 4-Mbit stacked-capacitor FeRAM (STACK FeRAM) 2.32 µm2[1], the chip size of the developed 8-Mbit FeRAM, including extra 2-Mbit parities for the error correction code (ECC), is just 52.37 mm2, which is about 30% smaller than twice of the 4-Mbit STACK FeRAM device, 37.68mm2×2[1]. This excellent characteristic can be attributed to the large cell matrix architectures of the sectional cyclic word line (WL) that was used to increase the column numbers, and to the 1T1C bit-line GND level sensing (BGS)[2][3] circuit design intended to sense bit lines (BL) that have bit cells 1K long and a large capacitance. An access time of 52 ns and a cycle time of 77 ns in RT at a VDD of 1.8 V were achieved.