The hybrid electrical/optical multi-chip integration technique for optical modules for optical network system has been developed. Employing the technique, a 44 broadcast-and-select type optical matrix switch module has been realized. The module consists of four sets of silica waveguide 1 : 4 splitters/4 : 1 combiners, four 4-channel arrays of polarization insensitive semiconductor optical amplifiers with spot-size converters as optical gates, printed wiring chips for electrical wiring and single mode fibers for optical signal interface on planar waveguide platform fabricated by atmospheric pressure chemical vapor deposition. All the gates and the wiring chips were mounted precisely onto the platform at once in flip-chip manner by self-align technique using AuSn solder bumps. Coupling loss between the waveguide and the SOA gate was estimated to be 4.5 dB. Averaged fiber-to-fiber signal gain, on-off ratio and polarization dependent loss for each of the signal paths was 7 dB 2 dB, more than 40 dB and 0.5 dB, respectively. High speed 10 Gb/s photonic cell switching as short as 2 nsec has been successfully achieved.

Spot-size-converter integrated semiconductor optical amplifiers have been developed as gate elements for optical switch matrices. An S-shape waveguide has been introduced to prevent re-coupling of unguided light to the output fiber. An angled-facet structure effectively suppressed light reflection at the end facets. Consequently, a high extinction ratio of 70 dB and a high fiber-to-fiber gain of 20 dB were achieved. Sufficient optical coupling characteristics to a flat-ended single-mode fiber with a coupling loss of 3.5 dB were also demonstrated.

The hybrid electrical/optical multi-chip integration technique for optical modules for optical network system has been developed. Employing the technique, a 44 broadcast-and-select type optical matrix switch module has been realized. The module consists of four sets of silica waveguide 1 : 4 splitters/4 : 1 combiners, four 4-channel arrays of polarization insensitive semiconductor optical amplifiers with spot-size converters as optical gates, printed wiring chips for electrical wiring and single mode fibers for optical signal interface on planar waveguide platform fabricated by atmospheric pressure chemical vapor deposition. All the gates and the wiring chips were mounted precisely onto the platform at once in flip-chip manner by self-align technique using AuSn solder bumps. Coupling loss between the waveguide and the SOA gate was estimated to be 4.5 dB. Averaged fiber-to-fiber signal gain, on-off ratio and polarization dependent loss for each of the signal paths was 7 dB 2 dB, more than 40 dB and 0.5 dB, respectively. High speed 10 Gb/s photonic cell switching as short as 2 nsec has been successfully achieved.

Control scheme for accurately optimizing (and also automatically stabilizing) the interferometer phase bias of Symmetric-Mach-Zehnder (SMZ)-type ultrafast all-optical switches is proposed. In this control scheme, a weak cw light is used as a supervisory input light and its spectral power ratio at the switch output is used as a bipolar error signal. Our experimental result at 168-Gb/s 16:1 demultiplexing with a hybrid-integrated SMZ switch indicates the feasibility and the sensitivity of this control scheme.

Spot-size-converter integrated semiconductor optical amplifiers have been developed as gate elements for optical switch matrices. An S-shape waveguide has been introduced to prevent re-coupling of unguided light to the output fiber. An angled-facet structure effectively suppressed light reflection at the end facets. Consequently, a high extinction ratio of 70 dB and a high fiber-to-fiber gain of 20 dB were achieved. Sufficient optical coupling characteristics to a flat-ended single-mode fiber with a coupling loss of 3.5 dB were also demonstrated.

A newly developed hybrid-integrated Symmetric Mach-Zehnder (HI-SMZ) all-optical switch is reported. For integration, we chose the Symmetric Mach-Zehnder (SMZ) structure rather than the Polarization-Discriminating Symmetric Mach-Zehnder (PD-SMZ) structure which is similar to SMZ but more often used in experiments using discrete optical components. We discuss advantages and disadvantages of SMZ and PD-SMZ to show that SMZ is more suitable for integration. We also discuss about the use of SOAs as nonlinear elements for all-optical switches. We conclude that, although the ultrafast switching capability of SMZ is limited by the gain compression of SOAs, the very low switching energy is more important for practical devices. We then describe the HI-SMZ all-optical switch. This integration scheme has advantages which include low loss, low dispersion silica waveguides for high speed operation and ease in large scale integration of many SMZs with other optical, electrical, and opto-electrical devices. We show that a very high dynamic extinction ratio is possible with HI-SMZ. We also examine HI-SMZ with 1 ps pulses to show its ultrafast capability. Finally, we describe a 168 to 10.5 Gbps error-free demultiplexing experiment which is to our best knowledge the fastest experiment with an integrated device.

We have measured the temperature range ΔTSM of one particular longitudinal mode operation in short-cavity surface emitting (SE) lasers. ΔTSM was increased up to 103 K by reducing the cavity length to be 4 µm. It is expected that a short-cavity SE laser shows stable single mode operation in a wide temperature range.