Three custom LSIs for EB60, a direct wafer exposure electron beam system, have been developed using 0.8 µm BiCMOS and SST bipolar technologies. The three LSIs are i) a shot cycle control LSI for controlling each exposure cycle time, ii) a linear matrix computation LSI for coordinate modification of the exposure pattern data, and iii) a position calculation LSI for determining the precise position of the wafer. These LSIs allow the deflection corrector block of the revised EB60 to be realized on a single board. A new adaptive pipeline control technique which optimizes each shot period according to the exposure data is implemented in the shot-cycle control LSI. The position calculation LSI implements a new, highly effective 2-level pipeline exposure technique, the levels refer to major-field-deflection and minor-field-deflection. The linear-matrix computation LSI is designed not only for the EB60 but also for a wide variety of parallel digital processing applications.