IEICE TRANSACTIONS on Electronics
Real-Time Feed-Forward Control LSIs for a Direct Wafer Exposure Electron Beam System
Summary :
Three custom LSIs for EB60, a direct wafer exposure electron beam system, have been developed using 0.8 µm BiCMOS and SST bipolar technologies. The three LSIs are i) a shot cycle control LSI for controlling each exposure cycle time, ii) a linear matrix computation LSI for coordinate modification of the exposure pattern data, and iii) a position calculation LSI for determining the precise position of the wafer. These LSIs allow the deflection corrector block of the revised EB60 to be realized on a single board. A new adaptive pipeline control technique which optimizes each shot period according to the exposure data is implemented in the shot-cycle control LSI. The position calculation LSI implements a new, highly effective 2-level pipeline exposure technique, the levels refer to major-field-deflection and minor-field-deflection. The linear-matrix computation LSI is designed not only for the EB60 but also for a wide variety of parallel digital processing applications.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.1 pp.124-135
- Publication Date
- 1993/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Integrated Electronics
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Hironori YAMAUCHI, Tetsuo MOROSAWA, Takashi WATANABE, Atsushi IWATA, Tsutomu HOSAKA, "Real-Time Feed-Forward Control LSIs for a Direct Wafer Exposure Electron Beam System" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 1, pp. 124-135, January 1993, doi: .
Abstract: Three custom LSIs for EB60, a direct wafer exposure electron beam system, have been developed using 0.8 µm BiCMOS and SST bipolar technologies. The three LSIs are i) a shot cycle control LSI for controlling each exposure cycle time, ii) a linear matrix computation LSI for coordinate modification of the exposure pattern data, and iii) a position calculation LSI for determining the precise position of the wafer. These LSIs allow the deflection corrector block of the revised EB60 to be realized on a single board. A new adaptive pipeline control technique which optimizes each shot period according to the exposure data is implemented in the shot-cycle control LSI. The position calculation LSI implements a new, highly effective 2-level pipeline exposure technique, the levels refer to major-field-deflection and minor-field-deflection. The linear-matrix computation LSI is designed not only for the EB60 but also for a wide variety of parallel digital processing applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_1_124/_p
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@ARTICLE{e76-c_1_124,
author={Hironori YAMAUCHI, Tetsuo MOROSAWA, Takashi WATANABE, Atsushi IWATA, Tsutomu HOSAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Real-Time Feed-Forward Control LSIs for a Direct Wafer Exposure Electron Beam System},
year={1993},
volume={E76-C},
number={1},
pages={124-135},
abstract={Three custom LSIs for EB60, a direct wafer exposure electron beam system, have been developed using 0.8 µm BiCMOS and SST bipolar technologies. The three LSIs are i) a shot cycle control LSI for controlling each exposure cycle time, ii) a linear matrix computation LSI for coordinate modification of the exposure pattern data, and iii) a position calculation LSI for determining the precise position of the wafer. These LSIs allow the deflection corrector block of the revised EB60 to be realized on a single board. A new adaptive pipeline control technique which optimizes each shot period according to the exposure data is implemented in the shot-cycle control LSI. The position calculation LSI implements a new, highly effective 2-level pipeline exposure technique, the levels refer to major-field-deflection and minor-field-deflection. The linear-matrix computation LSI is designed not only for the EB60 but also for a wide variety of parallel digital processing applications.},
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - Real-Time Feed-Forward Control LSIs for a Direct Wafer Exposure Electron Beam System
T2 - IEICE TRANSACTIONS on Electronics
SP - 124
EP - 135
AU - Hironori YAMAUCHI
AU - Tetsuo MOROSAWA
AU - Takashi WATANABE
AU - Atsushi IWATA
AU - Tsutomu HOSAKA
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1993
AB - Three custom LSIs for EB60, a direct wafer exposure electron beam system, have been developed using 0.8 µm BiCMOS and SST bipolar technologies. The three LSIs are i) a shot cycle control LSI for controlling each exposure cycle time, ii) a linear matrix computation LSI for coordinate modification of the exposure pattern data, and iii) a position calculation LSI for determining the precise position of the wafer. These LSIs allow the deflection corrector block of the revised EB60 to be realized on a single board. A new adaptive pipeline control technique which optimizes each shot period according to the exposure data is implemented in the shot-cycle control LSI. The position calculation LSI implements a new, highly effective 2-level pipeline exposure technique, the levels refer to major-field-deflection and minor-field-deflection. The linear-matrix computation LSI is designed not only for the EB60 but also for a wide variety of parallel digital processing applications.
ER -
English
