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[Author] Tetsuo NAKANO(2hit)

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  • BiCMOS Circuit Techniques for 3.3 V Microprocessors

    Fumio MURABAYASHI  Tatsumi YAMAUCHI  Masahiro IWAMURA  Takashi HOTTA  Tetsuo NAKANO  Yutaka KOBAYASHI  

     
    PAPER

      Vol:
    E76-C No:5
      Page(s):
    695-700

    With increases in frequency and density of RISC microprocessors due to rapid advances in architecture, circuit and fine device technologies, power consumption becomes a bigger concern. Supply voltage should be reduced from 5 V to 3.3 V. In this paper, several novel circuits using 0.5µm BiCMOS technology are proposed. These can be applied to a superscalar RISC microprocessor at 3.3 V power supply or below. High speed and low power consumption characteristics are achieved in a floating-point data path, an integer data path and a TLB by using the proposed circuits. The three concepts behind the proposed high speed circuit techniques at low voltage are summarized as follows. There are a number of heavy load paths in a microprocessor, and these become critical paths under low voltage conditions. To achieve high speed characteristics under heavy load conditions without increasing circuit area, low voltage swing operation of a circuit is effective. By exploiting the high conductance of a bipolar transistor, instead of using an MOS transistor, low swing operation can be got. This first concept is applied to a single-ended common-base sense circuit with low swing data lines in the register file of a floating and an integer data path. Both multi-series transistor connections and voltage drops by Vth of MOS transistors and Vbe of bipolar transistors also degrade the speed performance of a circuit. Then the second concept employed is a wired-OR logic circuit technique using bipolar transistors which is applied to a comparator in the TLB instead of multi-series transistor connections of CMOS circuits. The third concept to overcome the voltage drops by Vth and Vbe is addition of a pull up PMOS to both the path logic adder and the BiNMOS logic gate to ensure the circuits have full swing operation.

  • A 120-MHz BiCMOS Superscalar RISC Processor

    Shigeya TANAKA  Takashi HOTTA  Fumio MURABAYASHI  Hiromichi YAMADA  Shoji YOSHIDA  Kotaro SHIMAMURA  Koyo KATSURA  Tadaaki BANDOH  Koichi IKEDA  Kenji MATSUBARA  Kouji SAITOU  Tetsuo NAKANO  Teruhisa SHIMIZU  Ryuichi SATOMURA  

     
    PAPER

      Vol:
    E77-C No:5
      Page(s):
    719-726

    A superscalar RISC processor contains 2.8 million transistors in a die size of 16.2 mm16.5 mm, and utilizes 3.3 V/0.5 µm BiCMOS technology. In order to take advantage of superscalar performance without incurring penalties from a slower clock or a longer pipeline, a tag bit is implemented in the instruction cache to indicate dependency between two instructions. A performance gain of up to 37% is obtained with only a 3.5% area overhead from our superscalar design.