Yoshihiro UTSUROGI Masaki HARUOKA Toshimasa MATSUOKA Kenji TANIGUCHI
A RF front-end chip for a dual-band Global Positioning System (GPS) receiver for L1 and L2 bands is designed using 0.25 µm CMOS technology. All function blocks of the GPS front-end are integrated onto one chip. The low noise amplifier has input matching over a wide frequency range to handle the L1 and L2 bands. This receiver uses a dual-band image-reject mixer with the quadrature mixer sharing a transconductor stage. This configuration enables the RF blocks to be shared with the L1 and L2 bands. The receiver has a chip area of 3.16 mm3.16 mm, and consumes 35 mA at 2.5 V.
Takao KIHARA Hae-Ju PARK Isao TAKOBE Fumiaki YAMASHITA Toshimasa MATSUOKA Kenji TANIGUCHI
A 0.5 V transformer folded-cascode CMOS low-noise amplifier (LNA) is presented. The chip area of the LNA was reduced by coupling the internal inductor with the load inductor, and the effects of the magnetic coupling between these inductors were analyzed. The magnetic coupling reduces the resonance frequency of the input matching network, the peak frequency and magnitude of the gain, and the noise contributions from the common-gate stage to the LNA. A partially-coupled transformer with low magnetic coupling has a small effect on the LNA performance. The LNA with this transformer, fabricated in a 90 nm digital CMOS process, achieved an S11 of -14 dB, NF of 3.9 dB, and voltage gain of 16.8 dB at 4.7 GHz with a power consumption of 1.0 mW at a 0.5 V supply. The chip area of the proposed LNA was 25% smaller than that of the conventional folded-cascode LNA.
Jungnam BAE Saichandrateja RADHAPURAM Ikkyun JO Weimin WANG Takao KIHARA Toshimasa MATSUOKA
A low-voltage controller-based all-digital phase-locked loop (ADPLL) utilized in the medical implant communication service (MICS) frequency band was designed in this study. In the proposed design, controller-based loop topology is used to control the phase and frequency to ensure the reliable handling of the ADPLL output signal. A digitally-controlled oscillator with a delta-sigma modulator was employed to achieve high frequency resolution. The phase error was reduced by a phase selector with a 64-phase signal from the phase interpolator. Fabricated using a 130-nm CMOS process, the ADPLL has an active area of 0.64 mm2, consumes 840 µW from a 0.7-V supply voltage, and has a settling time of 80 µs. The phase noise was measured to be -114 dBc/Hz at an offset frequency of 200 kHz.
Sungwoo CHA Tetsuya HIROSE Masaki HARUOKA Toshimasa MATSUOKA Kenji TANIGUCHI
An intermediate frequency (IF) variable gain amplifier (VGA) with exponential gain control for a radio receiver is fabricated in 0.25-µm CMOS technology. The techniques to improve the bandwidth and to reduce temperature dependence of gain are described. The complete VGA is composed of two stages of linearized transconductance VGA and three stages of fixed gain amplifier (FGA). The complete VGA provides a continuous 10 dB to 76.5 dB gain control range, an IIP3 of -11.5 dBm and an NF of 15 dB at 40 MHz.
Hideyuki FURUYA Sungwoo CHA Yoshiyuki SHIMIZU Masaki HARUOKA Toshimasa MATSUOKA Kenji TANIGUCHI
A demodulator for short-range wireless interconnect using ASK/CDMA technique has been developed with 0.25 µm CMOS technology. The fabricated demodulator demonstrates the demodulation of 7.35 Mbps bit rate with 31 spread spectrum code length at 10 GHz carrier frequency.