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[Author] Yasushi YAMAUCHI(2hit)

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  • VLSI Implementation of a Complete Pipeline MMSE Detector for a 44 MIMO-OFDM Receiver

    Shingo YOSHIZAWA  Yasushi YAMAUCHI  Yoshikazu MIYANAGA  

     
    PAPER-VLSI Design Technology and CAD

      Vol:
    E91-A No:7
      Page(s):
    1757-1762

    This paper presents a VLSI architecture of MMSE detection in a 44 MIMO-OFDM receiver. Packet-based MIMO-OFDM imposes a considerable throughput requirement on the matrix inversion because of strict timing in frame structure and subcarrier-by-subcarrier basis processing. Pipeline processing oriented algorithms are preferable to tackle this issue. We propose a pipelined MMSE detector using Strassen's algorithms of matrix inversion and multiplication. This circuit achieves real-time operation which does not depend on numbers of subcarriers. The designed circuit has been implemented to a 90-nm CMOS process and shows a potential for providing a 2.6-Gbps transmission speed in a 160-MHz signal bandwidth.

  • Effect of Impurity in Discharge Gas on High γ Properties of Newly Developed CeSrO Film for Novel Plasma Display Panel Open Access

    Yasuhiro YAMAUCHI  Yusuke FUKUI  Yosuke HONDA  Michiko OKAFUJI  Masahiro SAKAI  Mikihiko NISHITANI  Yasushi YAMAUCHI  

     
    INVITED PAPER

      Vol:
    E95-C No:11
      Page(s):
    1761-1768

    The discharge properties and chemical surface stability of CeO2 containing Sr (CeSrO) as the candidate for high-γ protective layer of noble plasma display panels (PDPs) are characterized. CeSrO films have superior chemical stability, because of the decrease in reactiveness on surface due to their fluorite structure. The discharge voltage is 50 V lower than that of MgO films for a pure discharge gas of Ne/Xe = 85/15 at 60 kPa. However the topmost surface, monolayer, of the CeSrO film relevant to the discharge property is hardly recovered from the damage by CO2 impurity in discharge gas. We can expect that by pumping down to a sufficiently low CO2 partial pressure (lower than 1 10-3 Pa), PDP panels with very high efficiency are realized with CeSrO protective layer.