The discharge properties and chemical surface stability of CeO2 containing Sr (CeSrO) as the candidate for high-γ protective layer of noble plasma display panels (PDPs) are characterized. CeSrO films have superior chemical stability, because of the decrease in reactiveness on surface due to their fluorite structure. The discharge voltage is 50 V lower than that of MgO films for a pure discharge gas of Ne/Xe = 85/15 at 60 kPa. However the topmost surface, monolayer, of the CeSrO film relevant to the discharge property is hardly recovered from the damage by CO2 impurity in discharge gas. We can expect that by pumping down to a sufficiently low CO2 partial pressure (lower than 1 10-3 Pa), PDP panels with very high efficiency are realized with CeSrO protective layer.

For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100 mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 µm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LT-BLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.