IEICE TRANSACTIONS on Electronics
High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates
Summary :
We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LT-BLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2071-2076
- Publication Date
- 2003/10/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
- Category
Authors
Masahiro SAKAI
Kenta ASANO
Subramaniam ARULKUMARAN
Hiroyasu ISHIKAWA
Takashi EGAWA
Takashi JIMBO
Tomohiko SHIBATA
Mitsuhiro TANAKA
Osamu ODA
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Masahiro SAKAI, Kenta ASANO, Subramaniam ARULKUMARAN, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, Tomohiko SHIBATA, Mitsuhiro TANAKA, Osamu ODA, "High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 2071-2076, October 2003, doi: .
Abstract: We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LT-BLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2071/_p
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@ARTICLE{e86-c_10_2071,
author={Masahiro SAKAI, Kenta ASANO, Subramaniam ARULKUMARAN, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, Tomohiko SHIBATA, Mitsuhiro TANAKA, Osamu ODA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates},
year={2003},
volume={E86-C},
number={10},
pages={2071-2076},
abstract={We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LT-BLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates
T2 - IEICE TRANSACTIONS on Electronics
SP - 2071
EP - 2076
AU - Masahiro SAKAI
AU - Kenta ASANO
AU - Subramaniam ARULKUMARAN
AU - Hiroyasu ISHIKAWA
AU - Takashi EGAWA
AU - Takashi JIMBO
AU - Tomohiko SHIBATA
AU - Mitsuhiro TANAKA
AU - Osamu ODA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LT-BLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.
ER -
English
