IEICE TRANSACTIONS on Electronics
Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE
Summary :
For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100 mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 µm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.
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- IEICE TRANSACTIONS on Electronics Vol.E86-C No.10 pp.2077-2081
- Publication Date
- 2003/10/01
- Publicized
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- Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
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Makoto MIYOSHI, Masahiro SAKAI, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, Mitsuhiro TANAKA, Osamu ODA, "Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 2077-2081, October 2003, doi: .
Abstract: For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100 mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 µm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_2077/_p
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@ARTICLE{e86-c_10_2077,
author={Makoto MIYOSHI, Masahiro SAKAI, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, Mitsuhiro TANAKA, Osamu ODA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE},
year={2003},
volume={E86-C},
number={10},
pages={2077-2081},
abstract={For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100 mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 µm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE
T2 - IEICE TRANSACTIONS on Electronics
SP - 2077
EP - 2081
AU - Makoto MIYOSHI
AU - Masahiro SAKAI
AU - Hiroyasu ISHIKAWA
AU - Takashi EGAWA
AU - Takashi JIMBO
AU - Mitsuhiro TANAKA
AU - Osamu ODA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100 mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 µm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.
ER -
English
