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Joong-Won SHIN Masakazu TANUMA Shun-ichiro OHMI
In this research, we investigated the threshold voltage (VTH) control by partial polarization of metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5 nm-thick nondoped HfO2 gate insulator utilizing Kr-plasma sputtering for Pt gate electrode deposition. The remnant polarization (2Pr) of 7.2 μC/cm2 was realized by Kr-plasma sputtering for Pt gate electrode deposition. The memory window (MW) of 0.58 V was realized by the pulse amplitude and width of -5/5 V, 100 ms. Furthermore, the VTH of MFSFET was controllable by program/erase (P/E) input pulse even with the pulse width below 100 ns which may be caused by the reduction of leakage current with decreasing plasma damage.
Min Gee KIM Masakazu KATAOKA Rengie Mark D. MAILIG Shun-ichiro OHMI
Ferroelectric gate field-effect transistors (MFSFETs) were investigated utilizing nondoped HfO2 deposited by RF magnetron sputtering utilizing Hf target. After the post-metallization annealing (PMA) process with Pt top gate at 500°C/30s, ferroelectric characteristic of 10nm thick nondoped HfO2 was obtained. The fabricated MFSFETs showed the memory window of 1.7V when the voltage sweep range was from -3 to 3V.
Tatsuya KAMEI Eisuke TOKUMITSU Hiroshi ISHIWARA
An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi2Ta2O9/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (Pd) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (Pr/Ps ratio) of the ferroelectric film on the transistor characteristics are discussed.