IEICE TRANSACTIONS on Electronics
Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
Summary :
An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi2Ta2O9/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (Pd) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (Pr/Ps ratio) of the ferroelectric film on the transistor characteristics are discussed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E81-C No.4 pp.577-583
- Publication Date
- 1998/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Tatsuya KAMEI, Eisuke TOKUMITSU, Hiroshi ISHIWARA, "Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 4, pp. 577-583, April 1998, doi: .
Abstract: An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi2Ta2O9/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (Pd) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (Pr/Ps ratio) of the ferroelectric film on the transistor characteristics are discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_4_577/_p
Copy
@ARTICLE{e81-c_4_577,
author={Tatsuya KAMEI, Eisuke TOKUMITSU, Hiroshi ISHIWARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization},
year={1998},
volume={E81-C},
number={4},
pages={577-583},
abstract={An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi2Ta2O9/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (Pd) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (Pr/Ps ratio) of the ferroelectric film on the transistor characteristics are discussed.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
T2 - IEICE TRANSACTIONS on Electronics
SP - 577
EP - 583
AU - Tatsuya KAMEI
AU - Eisuke TOKUMITSU
AU - Hiroshi ISHIWARA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1998
AB - An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi2Ta2O9/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (Pd) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (Pr/Ps ratio) of the ferroelectric film on the transistor characteristics are discussed.
ER -
English
