Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization

Tatsuya KAMEI; Eisuke TOKUMITSU; Hiroshi ISHIWARA

Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization

Tatsuya KAMEI, Eisuke TOKUMITSU, Hiroshi ISHIWARA

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An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi₂Ta₂O₉/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (P_d) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (P_r/P_s ratio) of the ferroelectric film on the transistor characteristics are discussed.

Publication: IEICE TRANSACTIONS on Electronics Vol.E81-C No.4 pp.577-583

Publication Date: 1998/04/25

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Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)

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Tatsuya KAMEI, Eisuke TOKUMITSU, Hiroshi ISHIWARA, "Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization" in IEICE TRANSACTIONS on Electronics, vol. E81-C, no. 4, pp. 577-583, April 1998, doi: .
Abstract: An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi₂Ta₂O₉/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (P_d) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (P_r/P_s ratio) of the ferroelectric film on the transistor characteristics are discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_4_577/_p

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@ARTICLE{e81-c_4_577,
author={Tatsuya KAMEI, Eisuke TOKUMITSU, Hiroshi ISHIWARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization},
year={1998},
volume={E81-C},
number={4},
pages={577-583},
abstract={An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi₂Ta₂O₉/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (P_d) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (P_r/P_s ratio) of the ferroelectric film on the transistor characteristics are discussed.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
T2 - IEICE TRANSACTIONS on Electronics
SP - 577
EP - 583
AU - Tatsuya KAMEI
AU - Eisuke TOKUMITSU
AU - Hiroshi ISHIWARA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1998
AB - An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi₂Ta₂O₉/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (P_d) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (P_r/P_s ratio) of the ferroelectric film on the transistor characteristics are discussed.
ER -