An improved numerical computation model is presented to calculate the metal-ferroelectric-semiconductor field effect transistor (MFSFET) characteristics with a sufficiently large gate area which can be applied for large drain voltages. In the presented model, the polarization of the ferroelectric gate insulator is inhomogeneous and treated as a variable along the channel. We have calculated electrical properties of SrBi2Ta2O9/Si MFSFETs and demonstrate that the conventional model, in which the polarization of the ferroelectric gate insulator (Pd) is treated as a constant, overestimate the drain current when the drain voltage is large. In addition, effects of the ratio of remanent polarization to spontaneous polarization (Pr/Ps ratio) of the ferroelectric film on the transistor characteristics are discussed.

A 32-bit embedded RISC microprocessor core integrating a DSP has been developed using a 0.18-µm five-layer-metal CMOS technology. The integrated DSP has a single-MAC and exploits CPU resources to reduce hardware. The DSP occupies only 0.5 mm2. The processor core includes a large on-chip 128 kB SRAM called U-memory. A large capacity on-chip memory decreases the amount of traffic with an external memory. And it is effective for low-power and high-performance operation. To realize low-power dissipation for the U-memory access, the active ratio of U-memory's access is reduced. The critical path is a load path from the U-memory, and we optimized the path through the whole chip. The chip achieves 0.79 mA/MHz executing Dhrystone 1.1 at 108 MHz, which is suitable for mobile applications.

We have developed an application processor optimized for 3G cellular phones. It provides high energy efficiency by using various low power techniques. For low active power consumption, we use a hierarchical clock gating technique with a static clock gating controlled by software and a two-level dynamic clock gating controlled by hardware. This technique reduces clock power consumption by 35%. And we also apply a pointer-based pipeline to in the CPU core, which reduces the pipeline latch power by 25%. This processor contains 256 kB of on-chip user RAM (URAM) to reduce the external memory access power. The URAM read buffer (URB) enables high-throughput, low latency access to the URAM while keeping the CPU clock frequency high because the URAM read data is transferred to the URB in 256-bit widths at half the frequency of the CPU. The average miss penalty is 3.5 cycles at the CPU clock frequency, hit rate is 89% and the energy used for URAM reads is 8% less that what it would be for URAM without a URB. These techniques reduce the power consumption of the CPU core, and achieve 4500 MIPS/W at 1.0 V power supply (Dhrystone 2.1). For the low leakage requirements, we use internal power switches, and provides resume-standby (R-standby) and ultra-standby (U-standby) modes. Signals across a power boundary are transmitted through µI/O circuits to prevent invalid signal transmission. In the R-standby mode, the power supply to almost all the CPU core area, except for the URAM is cut off and the URAM is set to a retention mode. In the U-standby mode, the power supply to the URAM is also turned off for less leakage current. The leakage currents in the R-standby and in the U-standby modes are respectively only 98 and 12 µA. For quick recovery from the R-standby mode, the boot address register (BAR) and control register contents needed immediately after wake-up are saved by hardware into backup latches. The other contents are saved by software into URAM. It takes 2.8 ms to fully recover from R-standby.

A SuperHTM embedded processor core implemented in a 130-nm CMOS process running at 400 MHz achieved 720 MIPS and 2.8 GFLOPS at a power of 250 mW in worst-case conditions. It has a dual-issue seven-stage pipeline architecture but maintains the 1.8 MIPS/MHz of the previous five-stage processor. The processor meets the requirements of a wide range of applications, and is suitable for digital appliances aimed at the consumer market, such as cellular phones, digital still/video cameras, and car navigation systems.