To ensure secure mobile communication, the communicating entities must know their mutual identities. The entities which need to be identified in a mobile communication system are mobile devices and the network. Third Generation Partnership Project (3GPP) has specified Evolved Packet System Authentication and Key Agreement (EPS AKA) procedure for the mutual authentication of user and the Long Term Evolution (LTE) network. EPS AKA certainly overcomes most of the vulnerabilities in the Global System for Mobile Communications (GSM) and Universal Mobile Telecommunication System (UMTS) access procedures. However, the LTE access procedure still has security weaknesses against some of the sophisticated security threats, such as, Denial-of-Service (DoS) attacks, Man-in-the-Middle (MitM) attacks, rogue base station attacks and fails to ensure privacy protection for some of the important parameters. This paper proposes an improved security framework for the LTE access procedure by ensuring the confidentiality protection of International Mobile Subscriber Identity (IMSI) and random-challenge RAND. Also, our proposed system is designed to reduce the impact of DoS attacks which try to overwhelm the network with useless computations. We use a one-time shared key with a short lifetime between the UE and MME to protect IMSI and RAND privacy. Finally, we explore the parameters design for the proposed system which leads to satisfy the requirements imposed on computational load and latency as well as security strength.

In this paper, a novel slow-wave half mode substrate integrated waveguide (SW-HMSIW) structure is presented and experimentally demonstrated, and some interesting slow-wave propagation effects are obtained. The SW-HMSIW enables the cutoff frequency reduction and phase velocity to decrease without sacrificing its performance at the same lateral dimension, which equivalently reduces the lateral dimension and longitudinal size at the same frequency. Specifically, with the different loading microstrip width, a cutoff frequency reduction of 16%, 25%, 30% is achieved compared to the conventional HMSIW at the same lateral dimension. Both lateral and longitudinal size reductions significantly extend the operating range of SIW structures to low frequency region.

In this paper, we design a stealthy GSM phone identity catcher. As the GSM protocols do not mandate the authentication of BSes (Base Stations) to MSes (Mobile Stations), fake BSes can be implemented to lure victims to register with and thereby intercept crucial information of the user, including their identities. However, the straightforward implementation of GSM phone identity catcher can be easily perceived by users employing detection software due to such phenomena as phone interface changes and service interruptions. In this paper, we propose several effective mechanisms, such as smart configuration of the fake BSes, quick attachment/detachment and service relay, to make the catching process invisible to users and software. Real world experiments have been conducted and the results prove the efficiency and stealth of our proposed GSM phone identity catcher. We hope our work could help to enhance the effectiveness of IMSI catching attack and thereby alert the industry to design stronger authentication protocol in communication systems.

In the IEEE 802.11e standard, a reference scheduler is presented. The reference scheduler uses the same service interval (SI) to poll all stations in a polling list, and uses separate scheduling and admission algorithms. This increases the polling overhead and decreases TXOP utilization. Many papers have attempted to enhance the reference scheduler, but its admission control is similar to reference scheduler. In this paper, we propose a scheduling and admission algorithm that assigns each station an SI close to its maximum SI (MSI). As a result, the proposed algorithm shows higher performance than that of the reference scheduler.

In this paper, the research advances in silicon based millimeter wave and THz ICs in the State Key Laboratory of Millimeter Waves is reviewed, which consists of millimeter wave amplifiers, mixers, oscillators at Q, V and W and D band based on CMOS technology, and several research approaches of THz passive ICs including cavity and filter structures using SIW-like (Substrate Integrated Waveguide-like) guided wave structures based on CMOS and MEMs process. The design and performance of these components and devices are presented.

In this letter, a broadband coupler is presented that makes use of a half mode substrate integrated waveguide (HMSIW) technique using a printed circuit board process. The coupler is realized by a parallel HMSIW line which couples energy by magnetic field. Compared with micro-strip coupler and conventional HMSIW coupler, it has lower loss and better Electromagnetic Compatibility owning to the closed field structure. Compared with SIW coupler, it has smaller size and lower cost owing to the half TE10 model. The coupler is simulated and measured at 8-12 GHz. Measured results show a good agreement with simulation.

In this paper, the research advances in SIW-like (Substrate Integrated Waveguide-like) guided wave structures and their applications in the State Key Laboratory of Millimeter Waves of China is reviewed. Our work is concerned with the investigations on the propagation characteristics of SIW, half-mode SIW (HMSIW) and the folded HMSIW (FHMSIW) as well as their applications in microwave and millimeter wave filters, diplexers, directional couplers, power dividers, antennas, power combiners, phase shifters and mixers etc. Selected results are presented to show the interesting features and advantages of those new techniques.

In this paper, a novel eight-way Ka-band spatial power combining structure based on SIW/HMSIW is presented and studied. The power-combining structure is realized by transitions between HMSIW and parallel multiport planar microstrip lines. The power combiner is designed and fabricated in 33.5-35 GHz. The measured results show a good agreement with simulation and a combining efficiency of 72% is achieved at 34.3 GHz.

We fabricated mixed-signal ICs (MSICs) using wafer-bonded SOI devices with a film several microns thick. We found the MOSFETs on wafer-bonded SOI had characteristics as good as those on a conventional wafer provided the active Si layer is more than 2 µm thick. We fabricated a 16-bit SOI-CMOS delta-sigma A/D converter that suppressed digital noise interference via the substrate. We also fabricated a rectifier-merged SOI-BiCMOS circuit. The resulting characteristics were good, and not possible using conventional junction isolation. Our results suggest that SOI-based isolation is a key technology in integrating devices and systems on a single chip.