The quantum dot optical frequency comb laser (QD-CML) is an attractive photonic device for generating a stable emission of fine multiple-wavelength peaks. In the present paper, 1.0-GHz and 10-ps-order short optical pulsation is successfully demonstrated from a hybrid mode-locked QD-CML with an ultrabroadband wavelength tuning range in the T+O band. In addition, 10-GHz high-repetition intensity-stable short optical pulse generation with a high S/N ratio is successfully demonstrated using an external-cavity QD-CML with a 10th-harmonic mode-locking technique.

We have demonstrated low-threshold two-dimensional photonic crystal lasers with self-assembled InAs/GaAs quantum dots. Coupled cavity designs of whispering gallery modes are defined in square lattice photonic crystal slabs. Our lasers showed a small 120 µW input pumping power threshold. Actual absorption power is evaluated to be less than 20 µW. Our lasers show high spontaneous emission coupling (β) factors0.1. The mode volumes are expected to be 0.7-1.2 times cubed wavelength by our modelling. Based on threshold analysis, 80 QDs are the effective number of QDs defined as the number of QDs needed to make PC cavities transparent if they are on maximum optical field points. Using the same analysis we found that single quantum dot lasing is likely to occur both by proper alignment of the single quantum dot relative to geometries of photonic crystals and by using sharp QD emission lines in high-Q localized modes.

Optical properties and growth of self-assembled quantum dots (SAQDs) for optoelectronic device applications are discussed. After briefly reviewing the history of research on QD lasers, we discuss growth of InAs SAQDs including the light emission at the wavelength of 1.52-µm with a narrow linewidth (22 meV) and the area-controlled growth which demonstrates formation of SAQDs in selected local areas on a growth plane using a SiO2 mask with MOCVD growth. Then properties of the InGaAs AQDs are investigated by the near-field photoluminescence excitation spectroscopy which reveals gradually increasing continuum absorption connected with the two-dimensional-like (2D-like) wetting layer, resulting in faster relaxation of electrons due to a crossover between 0D and 2D character in the density of states. In the coherent excitation spectroscopy, the decoherence time is determined to be about 15 ps, which is well explained by the phonon induced relaxation mechanism in the SAQDs. Finally, nitride-based SAQDs and perspective of QD optical devices are also discussed.