In-plane-aligned a-axis-oriented YBa2Cu3O7-δ (YBCO) thin films are attractive for the formation of planar intrinsic Josephson devices. In this study, these films were deposited by dc sputtering on LaSrGaO4 (LSGO) (100) substrates and the dependence of the characteristics on the deposition conditions was investigated. In-plane-aligned a-axis-oriented YBCO thin films were successfully grown in the substrate temperature range of 555-615. With the temperature gradient method, it was seen that the critical temperature of the film increased to 81 K. The current-voltage characteristic along the c-axis exhibited clear multibranch structures. These results indicate that ion-cleaning of the substrate surface broadens the growth temperature range of these films and planar intrinsic Josephson devices can be fabricated from these films.

High-Tc superconductors convincingly showed that these materials are essentially natural arrays of Josephson junctions formed in atomic scale. In this paper, in-plane aligned a-axis-oriented YBa2Cu3O7-δ (YBCO) thin films were successfully grown on LaSrGaO4(LSGO) (100) substrates which were cleaned by ion-beam. Voltage jumps with hysteresis implying intrinsic Josephson effects are observed in c-axis direction. This result suggest that it is possible to achieve planar intrinsic Josephson devices which have applications in high frequency electronics, such as voltage standards, Josephson masers and so on.

Amorphous films of YBCO and BSCCO (2212) sputtered on MgO substrate were crystallized using zonemelt technique. For YBCO films, thin Ag intermediate layer was found to be effective in enhancing crystal growth and preferred orientation. Zone-melted BSCCO films included both (2201) phase and Cu(Sr, Ca)O2 in a form of dendritic crystallites. Tc's obtained for YBCO and BSCCO films were 70 and 75 K, respectively.