This study numerically investigates the symbol-level allocation of four-level pulse-amplitude modulation (PAM4) signals for optically pre-amplified receiver systems. Three level-allocation schemes are examined: intensity-equispaced, amplitude-equispaced, and numerically optimized. Numerical simulations are conducted to comprehensively compare the receiver sensitivities for these level-allocation schemes under various system conditions. The results show that the superiority or inferiority between the level allocations is significantly dependent on the system conditions of the bandwidth of amplified spontaneous emission light, modulation bandwidth, and signal extinction ratio (ER). The mechanisms underlying these dependencies are also discussed.

This paper provides on a theoretical and numerical study of the probability density function (PDF) of the on-off keying (OOK) signals in ASE-limited systems. We present simple closed formulas of PDFs for the optical intensity and the received baseband signal. To confirm the validity of our model, the calculation results yielded by the proposed formulas are compared with those of numerical simulations and the conventional Gaussian model. Our theoretical and numerical results confirm that the signal distribution differs from a Gaussian profile. It is also demonstrated that our model can properly evaluate the signal distribution and the resultant BER performance, especially for systems with an optical bandwidth close to the receiver baseband width.

To drastically increase the splitting ratio of extended-reach (40km span) time- and wavelength-division multiplexed passive optical networks (WDM/TDM-PONs), we modify the gain control scheme of our automatic gain controlled semiconductor optical amplifiers (AGC-SOAs) that were developed to support upstream transmission in long-reach systems. While the original AGC-SOAs are located outside the central office (CO) as repeaters, the new AGC-SOAs are located inside the CO and connected to each branch of an optical splitter in the CO. This arrangement has the potential to greatly reduce the costs of CO-sited equipment as they are shared by many more users if the new gain control scheme works properly even when the input optical powers are low. We develop a prototype and experimentally confirm its effectiveness in increasing the splitting ratio of extended-reach systems to 512.

One-dimensional photonic crystal (PC) with alternating layers of TiO2 and SiO2 was fabricated with spin coating and low temperature baking, resulting in a successful tuning of the PC stop band so as to block the amplified spontaneous emission (ASE) of a π-conjugate polymer film. Single PC as a substrate, not a cavity with two PC's, of the polymer film was sufficient to shift the tangential ASE to the energy at PC stop band edge, indicating that the tangential ASE propagating along the interface was modulated by its evanescent-field tail in the PC, which opens the new pathway for low-threshold coherent luminescence from an ultrathin π-conjugate polymer film with ultimate mode volume.

Wavelength conversion using the cross-gain modulation (XGM) of amplified spontaneous emission (ASE) in a traveling-wave type semiconductor optical amplifier (TW-SOA) is theoretically studied. Taking into account the spatial and temporal variations of carrier density along the SOA length, output signal and converted ASE waveforms are analyzed. We also reveal the dependency of the signal and converted ASE waveforms on input signal power and repetition frequency, and confirm that numerical analyses well agree with the experimental results. Finally we qualitatively clarify the way to improve frequency response by simulating eye-diagrams for long SOAs and assist light pumping for the first time.

We propose a novel method of precisely measuring the polarization dependence of single pass gain (PDG) in a semiconductor optical amplifier integrated with spot-size convertors (SS-SOA). By averaging the signal gain of a SS-SOA over a wide wavelength range using the amplified spontaneous emission (ASE) of an erbium doped fiber (EDF), the PDG can be accurately estimated. This is because the influence of gain ripples on the measurement results are drastically reduced. We successfully evaluated the PDG of an angled-facet SS-SOA, even before the process of anti-reflection coating, within a small error of 0.5dB. The EDF-ASE technique is useful in sampling tests and selecting angled-facet SS-SOA chips from wafers. The polarization dependence of the coupling efficiency (PDCE) between a SS-SOA and optical fiber is also evaluated by measuring the photo-current of the active layer for TE and TM input signals. It is possible, therefore, to specify the polarization characteristics of the active region and spot-size converter region, which are indispensable parameters for the design of the SS-SOA.