This paper proposes an area- and energy-efficient DLL-based body bias generator (BBG) for minimum energy operation that controls p-well and n-well bias independently. The BBG can minimize total energy consumption of target circuits under a skewed process condition between nMOSFETs and pMOSFETs. The proposed BBG is composed of digital cells compatible with cell-based design, which enables energy- and area-efficient implementation without additional supply voltages. A test circuit is implemented in a 65-nm FDSOI process. Measurement results using a 32-bit RISC processor on the same chip show that the proposed BBG can reduce energy consumption close to a minimum within a 3% energy loss. In this condition, energy and area overheads of the BBG are 0.2% and 0.12%, respectively.

Body bias generators are useful circuits that can reduce variability and power dissipation in LSI circuits. However, the amplifier implemented into the body bias generator is difficult to design because of its complexity. To overcome the difficulty, this paper proposes a clearer cell-based design method of the amplifier than the existing cell-based design methods. The proposed method is based on a simple analytical model, which enables to easily design the amplifiers under various operating conditions. First, we introduce a small signal equivalent circuit of two-stage amplifiers by which we approximate a three-stage amplifier, and introduce a method for determining its design parameters based on the analytical model. Second, we propose a method of tuning parameters such as cell-based phase compensation elements and drive-strength of the output stage. Finally, based on the test chip measurement, we show the advantage of the body bias generator we designed in a cell-based flow over existing designs.

A forward/reverse body bias generator (BBG) which operates under wide supply-range is proposed. Fine-grained body biasing (FGBB) is effective to reduce variability and increase energy efficiency on digital LSIs. Since FGBB requires a number of BBGs to be implemented, simple design is preferred. We propose a BBG with charge pumps for reverse body bias and the BBG operates under wide supply-range from 0.5,V to 1.2,V. Layout of the BBG was designed in a cell-based flow with an AES core and fabricated in a 65~nm CMOS process. Area of the AES core is 0.22 mm$^2$ and area overhead of the BBG is 2.3%. Demonstration of the AES core shows a successful operation with the supply voltage from 0.5,V to 1.2,V which enables the reduction of power dissipation, for example, of 17% at 400,MHz operation.

A body bias generator (BBG) for fine-grained body biasing (FGBB) is proposed. The FGBB is effective to reduce variability and power consumption in a system-on-chip (SoC). Since FGBB needs a number of BBGs, the BBG is preferred to be implemented in cell-based design procedure. In the cell-based design, it is inefficient to provide an extra supply voltage for BBGs. We invented a BBG with switched capacitor configuration and it enables BBG to operate with wide range of the supply voltage from 0.6V to 1.2V. We fabricated the BBG in a 65nm CMOS process to control 0.1mm2 of core circuit with the area overhead of 1.4% for the BBG.