A novel type of optically clocked all-optical flip-flop based on a coupled-mode distributed Bragg reflector laser diode is proposed. The device operates as a bistable laser, where the two lasing modes at different wavelength are switched all-optically by injecting a clock pulse together with a set/reset signal. We employ an analytical model based on the two-mode coupled rate equations to verify the basic operation of the device numerically. Optically clocked flip-flop operation is obtained with a set/reset power of 0.60 mW and clock power of 1.8 mW. The device features simple structure, small footprint, and synchronized all-optical flip-flop operation, which should be attractive in the future digital photonic integrated circuits.

A simple model of inductor-coupled bistable oscillators is shown to exhibit pulse wave propagation. We demonstrate numerically that there exists a pulse wave which propagates with a constant speed in comparatively wide parameter region. In particular, the propagating pulse wave can be observed in non-uniform lattice with noise. The propagating pulse wave can be observed for comparatively strong coupling case, and for weak coupling case no propagating pulse wave can be observed (propagation failure). We also demonstrate various interaction phenomena between two pulses.

We propose an nn optical switch that is suitable for flexible and reliable optical access networks and for reconfigurable optical inter-module connections in large-scale processing systems. The switch consists of an intersecting waveguide matrix, matching oil, and microactuators. Switching is based on the movement of oil due to capillary pressure, which is controlled by the microactuator. The necessary switching conditions were calculated and the results showed that both the oil volume and the microactuator position must be controlled. A trial optical switch was fabricated to test the switching principle, and switching and self-holding were both confirmed. These results show the feasibility of a very small self-holding nn optical switch that uses a waveguide matrix and microactuators made by using microfabrication technologies.

Gate-controlled negative differential resistance (NDR) due to interband tunneling has been observed at room temperature in a Surface Tunnel Transistor (STT). The STT consists of a highly degenerate p+-drain, an n+-doped channel with an insulated gate, and an n+-source connected to the channel. To demonstrate application as a functional device, a bistable circuit consisting of only one STT and one load resistor was organized and its operation was confirmed. The obtained valley current in the NDR characteristics of the STT, however, is relatively large and limits the device performance. In order to clarify the origin of the valley current, we fabricated p+-n+ tunnel diodes in which growth interruption was done at the pn junction, and investigated the dependence of the NDR characteristics on both the impurity concentration at the regrown interface and the temperature. These measurements indicate that the valley current is mainly caused by the excess tunneling current through traps formed by the residual oxygen at the regrown interface.