This paper presents practical modeling procedure of feed patterns, bond wires, and interconnects for microwave bare-chip devices. Dedicated test structures have been designed for the process. Modeling accuracy of BJTs and diodes has been unprecedentedly improved up to 30 GHz with this procedure despite popular SPICE models were used.

In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.

New equivalent characterizations are derived for Schur stability property of real polynomials. They involve a single scalar parameter, which can be regarded as a freedom incorporated in the given polynomials so long as the stability is concerned. Possible applications of the expressions are suggested to the latest results for stability robustness analysis in parameter space. Further, an extension of the characterizations is made to the matrix case, yielding one-parameter expressions of Schur matrices.