Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's
Summary :
In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.2 pp.408-414
- Publication Date
- 2002/02/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
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Hitoshi AOKI, "Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 2, pp. 408-414, February 2002, doi: .
Abstract: In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_2_408/_p
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@ARTICLE{e85-c_2_408,
author={Hitoshi AOKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's},
year={2002},
volume={E85-C},
number={2},
pages={408-414},
abstract={In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's
T2 - IEICE TRANSACTIONS on Electronics
SP - 408
EP - 414
AU - Hitoshi AOKI
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2002
AB - In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.
ER -
English
