The search functionality is under construction.

The search functionality is under construction.

In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.

- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.2 pp.408-414

- Publication Date
- 2002/02/01

- Publicized

- Online ISSN

- DOI

- Type of Manuscript
- PAPER

- Category
- Semiconductor Materials and Devices

The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.

Copy

Hitoshi AOKI, "Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 2, pp. 408-414, February 2002, doi: .

Abstract: In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.

URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_2_408/_p

Copy

@ARTICLE{e85-c_2_408,

author={Hitoshi AOKI, },

journal={IEICE TRANSACTIONS on Electronics},

title={Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's},

year={2002},

volume={E85-C},

number={2},

pages={408-414},

abstract={In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.},

keywords={},

doi={},

ISSN={},

month={February},}

Copy

TY - JOUR

TI - Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's

T2 - IEICE TRANSACTIONS on Electronics

SP - 408

EP - 414

AU - Hitoshi AOKI

PY - 2002

DO -

JO - IEICE TRANSACTIONS on Electronics

SN -

VL - E85-C

IS - 2

JA - IEICE TRANSACTIONS on Electronics

Y1 - February 2002

AB - In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.

ER -