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[Keyword] current mismatch(2hit)

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  • Layout-Aware Variability Characterization of CMOS Current Sources

    Bo LIU  Bo YANG  Shigetoshi NAKATAKE  

     
    PAPER

      Vol:
    E95-C No:4
      Page(s):
    696-705

    Current sources are essential components for analog circuit designs, the mismatch of which causes the significant degradation of the circuit performance. This paper addresses the mismatch model of CMOS current sources, unlike the conventional modeling, focusing on the layout- and λ-dependency of the process variation, where λ is the output conductance parameter. To make it clear what variation parameter influences the mismatch, we implemented a test chip on 90 nm process technology, where we can collect the characteristics variation data for MOSFETs of various layouts. The test chip also includes D/A converters to check the differential non-linearity (DNL) caused by the mismatch of current sources when behaving as a DAC. Identifying the variation and the circuit-level errors in the measured DNLs, we reveal that our model can more accurately account for the current variation compared to the conventional mismatch model.

  • A Fast Switching Low Phase Noise CMOS Frequency Synthesizer with a New Coarse Tuning Method for PHS Applications

    Kang-Yoon LEE  Hyunchul KU  Young Beom KIM  

     
    PAPER-Integrated Electronics

      Vol:
    E89-C No:3
      Page(s):
    420-428

    This paper presents a fast switching CMOS frequency synthesizer with a new coarse tuning method for PHS applications. To achieve the fast lock-time and the low phase noise performance, an efficient bandwidth control scheme is proposed. To change the bandwidth, the charge pump current and the loop filter zero resistor should be changed. Charge pump up/down current mismatches are compensated with the current mismatch compensation block. The proposed coarse tuning method selects the optimal tuning capacitances of the LC-VCO to optimize the phase noise and the lock-time. The measured lock-time is about 20 µs and the phase noise is -121 dBc/ at 600 kHz offset. This chip is fabricated with 0.25 µm CMOS technology, and the die area is 0.7 mm2.1mm. The power consumption is 54 mW at 2.7 V supply voltage.