NROM is one of the emerging non-volatile-memory technologies, which is promising for replacing current floating-gate-based non-volatile memory such as flash memory. In order to raise the fabrication yield and enhance its reliability, a novel test and repair flow is proposed in this paper. Instead of the conventional fault replacement techniques, a novel fault masking technique is also exploited by considering the logical effects of physical defects when the customer's code is to be programmed. In order to maximize the possibilities of fault masking, a novel data inversion technique is proposed. The corresponding BIST architectures are also presented. According to experimental results, the repair rate and fabrication yield can be improved significantly. Moreover, the incurred hardware overhead is almost negligible.

We propose an advanced hyper parallel testing method which improves the line-mode test method by adding data inversion registers which we call the Advanced Line-mode Test (ALT). This testing method has the same testing capability as the conventional bit-by-bit and multi-bit test method (MBT), because it enables the application of a high sensitive and practical test patterns under the hyper parallel condition. The testing time for fixed data patterns are reduced by 1/1900 (all-0/1, checker board, and etc.). Moreover, the ALT can be applicable to the continuous patterns (march, walking, and etc.). The ALT improved from the line-mode test with registers and comparators (LTR) is able to applicable to the most test patterns and to reduce the testing time remarkably, and is suitable for the ULSI memories.