The Time Domain Boundary Element Method (TDBEM) has its advantages in the analysis of transient electromagnetic fields (wake fields) induced by a charged particle beam with curved trajectory in a particle accelerator. On the other hand, the TDBEM has disadvantages of huge required memory and computation time compared with those of the Finite Difference Time Domain (FDTD) method or the Finite Integration Technique (FIT). This paper presents a comparison of the FDTD method and 4-D domain decomposition method of the TDBEM based on an initial value problem formulation for the curved trajectory electron beam, and application to a full model simulation of the bunch compressor section of the high-energy particle accelerators.

This paper addresses the on-resistance (Ron) extraction of the DMOS based driver in Power IC designs. The proposed method can extract Ron of a driver from its layout data for the arbitrarily shaped metallization patterns. Such a driver is usually composed of arbitrarily shaped metals, arrayed vias, and DMOS transistors. We use FEM to extract the parasitic resistance of the source/drain metals since its strong contribution to Ron. In order to handle the large design case and accelerate the extraction process, a domain decomposition with virtual terminal insertion method is introduced, which succeeds in extraction for a set of industrial test cases including those the FEM without domain decomposition failed in. For a layout in which the DMOS cells are regularly placed, a sub-domain reuse procedure is also proposed, which obtained a dramatic speedup for the extraction. Even without the sub-domain reuse, our method still shows advantage in runtime and memory usage according to the simulation results.