Two novel low complexity dual-mode pulse generator designs suitable for FFs with triggering mode control are presented. The proposed designs successfully integrate XOR/OR (AND/XNOR) functions into a unified pass transistor logic (PTL) module to provide control on single- or double-edge operations. The designs use as few as 8 transistors each and ingeniously avoid the signal degradation problem inherent in most PTL circuits. As the only dual-mode designs so far, the proposed designs also outperform rival single-mode designs in both aspects of circuit complexity and power consumption.

A novel low insertion-loss and wideband microstrip bandpass filter has been designed and tested. The basic configuration of this novel dual-mode filter is a square ring resonator with direct-connected orthogonal feed lines, and dual-perturbation elements are introduced within the resonator at symmetrical location. The effects of the size of the perturbation element are studied. A new filter having wider bandwidth and transmission zeros are presented. The proposed filter responses are in good agreement with the simulations and experiments.

This paper describes a 3.5 V operation InGaP HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900 MHz triple band handset applications. Conventional GSM amplifiers have a high linear gain of 40 dB or more to realize efficiency operation in large gain compression state exceeding at least 5 dB. On the other hand, an EDGE amplifier needs a linear operation to prevent signal distortion. This means that a high linear gain amplifier cannot be applied to the EDGE amplifier, because the high gain leads to the high noise power in the receive band (Rx-noise). In order to solve this problem, we have changed the linear gain of the amplifier between GSM and EDGE mode. In EDGE mode, the stage number of the amplifier changes from three to two. To reduce a high gain, the first stage transistors in the amplifier is bypassed through the diode switches. This newly proposed bypass circuit enables a high gain in GSM mode and a low gain in EDGE, thus allowing the amplifier to operate with high efficiency in both modes while satisfying the Rx-noise specification. In conclusion, with diode switches and a band select switch built on the MMIC, the module delivers a Pout of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4 dBm Pout and a 45% PAE for GSM1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -85 dBm/100 kHz, the module also delivers a 29.5 dBm Pout and a PAE of over 25% for EDGE900, a 28.5 dBm Pout and a PAE of over 25% for EDGE1800/1900.

A unified theory for the characteristics of dual modes in a circular resonator is elucidated in simple analytical expressions. First, a circular resonator is considered as a ring transmission line which allows two oppositely traveling waves. The essential quantities that characterize a transmission line, i. e. , the propagation constant and characteristic impedance are obtained theoretically and/or experimentally. Secondly, any circular resonator is described by a ring resonator model which can be treated analytically, and the resonant frequencies are obtained when perturbations are added along the periphery of a circular resonator. A two stage BPF is created by adding I/O ports to the perturbed circular resonator. Its center frequency and bandwidth is calculated based on the ring resonator model. The circuit condition for obtaining two attenuation poles at both sides of the passband is given together with the method for their control.

The fundamental TE10 mode in a rectangular waveguide of a square cross section is degenerate with TE01 mode. A quarter wavelength resonator made of a dielectric square waveguide is, therefore, applied for a small-sized bandpass filter, just like dual mode filters for base stations in the mobile communication. In this paper, the methods to couple the two modes are first studied, including cutting a corner of the resonator and adding some metal electrodes on its end face. Both methods help to flow the rf current of the odd mode at the corner, resulting in decrease of the series inductance and thus increase of the resonant frequency. The coupling constant, that is proportional to the difference of the odd and even-mode's resonant frequency, can be controlled by the perturbations mentioned above. The coupling to the external circuit is adjusted by an electrode fabricated also on the end face. It is connected to a microstrip line and capacitively couples to the resonant modes. The coupling strength increases with the dimension of the electrode. The adjustment of the resonant frequency is carried out by the similar electrode on the end face and connected to the center of the side of the square cross section. The frequency decreases with the length of the electrode. The unloaded Q is measured to be of around 500 for 5510 mm resonator of εr=93. The optimum aspect ratio for the resonator is found in terms of the Q value. The simplest bandpass filter, i.e., a two-stage bandpass filter is designed and fabricated using 5510 mm resonator. It is mounted in a square hole made in a printed circuit board and excited by a microstrip line. The frequency characteristics are in good agreement with the expected values.