This paper describes the behavior of voids that were formed due to electromigration and diffusion in the interconnections of gold during a DC bias tests of GaAs ICs to current densities in the interconnections of 0.67 106 A/cm2 to 1.27 106 A/cm2 in the high temperature range of 230 to 260. We have found that the voids were formed at the centers in the cross sections of the interconnections and that gold is left around the voids, which means current still flows after the void formation. We have carefully observed the movement of the anode and cathode side edge of the voids during the tests and found that edges moved toward the cathode, in the direction opposite to the electron flow. This direction is constant. Also, the voids are extended, which means that the velocity of the cathode side edge is greater than that of the anode side edge. The velocity of the edges almost proportionally increased with the current density. The constant edge movement direction and the velocity of the edge dependence on the current density suggest that one of the causes of the edge movement is electromigration. The velocity of the edge depends on the distance between the anode side edge of the void and the through hole. The velocity increases in accordance with a decrease in the distance. This means that one of the causes of the edge movement is the diffusion of gold atoms by a concentration and pressure gradient. The GaAs IC failed at almost the same time as the voids appeared. It is important for reliability to prevent the formation of voids caused by electromigration and diffusion.

We report on progress in the development of high current density NbN/AlN/NbN tunnel junctions for application as submillimeter wave SIS mixers. A ultra-high current density up to 120 kA/cm2, roughly two orders of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions. The magnetic field dependence and temperature dependence of critical supercurrents were measured to investigate the Josephson tunneling behaviour of critical supercurrents in the high-Jc junctions. We have developed a low-noise quasi-optical SIS mixer with the high-current density NbN/AlN/NbN junctions and two-junction tuning circuits which employ Al/SiO/NbN microstriplines. The tuning characteristics of the mixer were investigated by measuring the response in the direct detection mode by using the Fourier Transform Spectrometer (FTS) and measuring the response in the heterodyne detection mode with the standard Y-factor method at frequencies from 670 to 1082 GHz. An uncorrected double sideband receiver noise temperature of 457 K (12hν/kB) was obtained at 783 GHz.

We report on progress in the development of high-current-density all-NbN tunnel junctions for application as submillimeter wave SIS mixers. A very high current density up to 54 kA/cm2, roughly an order of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions with a thin aluminum nitride (AIN) tunnel barrier. Even though the junctions have a very high current density, they showed high-quality junction characteristics with a large gap voltage, sharp quasipartical current rise, and small subgap leakage current. The junctions also exhibited good Josephson tunneling behavior, excellent terahertz response, and sensitive heterodyne mixing properties. NbN/AIN/NbN tunnel junctions were integrated with a NbN thin-film antenna to investigate the terahertz responses and the heterodyne mixing properties in a quasioptical mixer testing system. Photon-assisted tunneling steps were clearly observed on the I-V curve with irradiation up to 1 THz, and low-noise heterodyne mixing was demonstrated in the 300-GHz band.