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Hsiu-Chih LEE Shyh-Cheng LEE Yi-Pin LIN Cheng-Kuang LIU
Based on the Si CMOS process, a low operating voltage and low power light emitting device is presented. It has a power transfer efficiency of 1 to 2 orders higher than previous reports and can be used as a high efficiency photodiode. Configurations using the same structure as both the light emitter and the optical receiver, and employing a simple modulation instrument is then proposed for applications in the chip-to-chip optical alignment and the signal transmission. Only single power supply is required in the emitter-receiver circuits and is compatible with other integrated circuits made by the CMOS process.
Hirotake KAJII Kazuya TAKAHASHI Yuichi HINO Yutaka OHMORI
The luminance of about 10,000 cd/m2 at an applied voltage of 9.2 V and the external emission efficiency 5.5 cd/A at an injection current density of 50 mA/cm2 have been obtained from an organic light emitting diode (OLED) using starburst molecule doped with 5,6,11,12-tetraphenylnaphthacene fabricated by wet-processing. We demonstrate that the OLEDs fabricated by wet-processing can be applied to fields of short range optical communication as the electro-optical conversion device for transmitting the signals of moving picture.
Hirotake KAJII Takahisa TSUKAGAWA Takayuki TANEDA Yutaka OHMORI
The optical pulses of 50 MHz has been obtained from an organic light emitting diode (OLED) based on the Alq3 emissive layer with the active area of 0.01 mm2. We demonstrate that the OLEDs can be applied to fields of optical communication as the electro-optical conversion device for transmitting the signals of moving picture.