With a view to applying to the active matrix displays, micromechanical electrostatic switches having Si-N both-ends-fixed beam of size 1.4 µm by 23 µm grown with LP-CVD on Si wafer were studied about its kinetic switching characteristics, especially its switching speed and hysteresis behavior. Electrostatic beam sticking problems were improved with the additional inverse polarity and short duration pulse following on the turn-on signal. The switching beam deflection of 0.16 µm with the switching time of less than 100 nsec. was measured by tightly focused laser interferometric method. Observed turn-on threshold voltages were more than 30 V, and the on/off hysteresis widths were from one third to two thirds of its threshold voltage. The memory function was experimented for the 2 msec. long holding period with the hold voltage of 25 V following on the writing pulse with the duration of 2 µsec. and the amplitude of 32 V. Now, planarization process has been considered to imtroduce the contact electrodes that were not built-in for these experiments. Although conductive actual switches were not tested, with the obtained results, it seems that the micromechanical electrostatic switch has the large potentials as an active matrix element in display panel especially in electro-luminescent devices or field-emission devices.

GaAs-based micromachining is a very attractive technique for integrating mechanical structures and active optical devices, such as laser diodes and photodiodes. For monolithically integrating mechanical parts onto laser diode wafers, the micromachining technique must be compatible with the laser diode fabrication process. Our micromachining technique features three major processes: epitaxitial growth (MOVPE) for both the structural and sacrificial layers, reactive dry-etching by chlorine for high-aspect, three-dimensional structures, and selective wet-etching by peroxide/ammonium hydroxide solution to release the moving parts. These processes are compatible with laser fabrication, so a cantilever beam structure can be fabricated at the same time as a laser diode structure. Furthermore, a single-crystal epitaxial layer has little residual stress, so precise microstructures can be obtained without significant deformation. We fabricated a microbeam resonator sensor composed of two laser diodes, a photodiode, and a micro-cantilever beam with an area of 400700 µm. The cantilever beam is 3 µm wide, 5 µm high, and either 110µm long for a 200-kHz resonant frequency or 50 µm long for a 1-MHz resonant frequency. The cantilever beam is excited by an intensity-modulated laser beam from an integrated excitation laser diode; the vibration signal is detected by a coupled cavity laser diode and a photodiode.

The mechanical impedance of silicone–gel model or chest surface has been measured and the viscoelasticity and effective vibrating radius have been obtained from the impedance. They depend on the distance between the internal block of the silicone–gel/ribs of right chest and the gel surface/skin surface. The 3–D image of internal structure is reconstructed, based on the relation between the distance from the surface and the effective vibrating radius.

Measuring mechanical characteristics of optical disks is significant not only for designing drives but also for assuring disk interchangeability. This paper shows that the lens-movement detection method has the greatest overall potential and thus fits to a practical system for measuring mechanical characteristics. A system based on this method was constructed by developing simple and accurate capacitive sensors that can be built into an optical head to detect lens movement. The system configuration includes a precision turntable and a high-duarability reference disk to fully extract the potential. Test results show that this measuring system has adequate measuring range, accuracy, and stability. Some applications of this system are described in this paper. They show that the system is useful for evaluating and improving optical disk mechanical characteristics.

Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO2 filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.

The 22 mechanical optical switch for single mode fiber (SMF) is reported. By using the precision grinding and molding techniques all-plastic multiple-fiber connector, 22 pin-referenced indirect slide switch is developed. The characteristics and the reliability test's results of this optical switch are also reported. Evaluations confirm that the switch has low insertion loss, high-speed switching, stable switching operations and reliability in practical applications.

Low-field mobilities and velocity versus electric field relations are among the key input parameters for drift-diffusion simulations of field-effect and bipolar transistors. For example, most device simulations that treat scattering from ionized impurities contain mobilities or velocity versus field relations based on the Born approximation (BA). The BA is insensitive to the sign of the charged impurity and is especially poor for ionized impurity scattering because of the relatively strong scattering of long-wavelength carriers, which have low energies, and therefore violate the validity condition for the BA. Such carriers occur at high symmetry points in the Brillouin zone and are critical for device behavior. There has been a tendency in the past to assume that majority and minority mobilities are equal. This assumption can lead to incorrect interpretations of device data and thereby misleading design strategies based on such simulations. We have calculated the majority electron and minority hole mobilities in GaAs at 300 K for donor densities between 51016 and 11019 cm-3 and the majority hole and minority electron mobilities for acceptor densities between 51016 and 11020 cm-3. We have included all the important scattering mechanisms for GaAs: acoustic phonon, polar optic phonon, nonpolar optic phonon (holes only), piezoelectric, ionized impurity, carrier-carrier, and plasmon scattering. The ionized impurity and carrier-carrier scattering processes have been calculated with a quantum mechanical phase-shift analysis to obtain more accurate matrix elements for these two scattering mechanisms. We compare the total scattering rate for majority electrons due to ionized impurities based on exact phase shifts and on the BA used by Brooks-Herring. We also present additional data that show the differences between the exact phase-shift analyses and the BA for majority electron scattering rates as functions of carrier energy and scattering angle. These results show that the calculated low-field mobilities are in good agreement with experiment, but they predict that at high dopant densities minority mobilities should increase with increasing dopant density for a short range of densities. This effect occurs because of the reduction of plasmon scattering and the removal of carriers from carrier-carrier scattering because of the Pauli exclusion principle. Some recent experiments support this finding. These results are important for device modeling because of the need to have reliable values for the minority mobilities and velocity-field relations.